SODDB3T RHG

Overview

The SODDB3T RHG is a bidirectional trigger diode (DIAC) manufactured by Taiwan Semiconductor Corporation. It is housed in an SMD/SMT SOD-123-2 package with dimensions of 2.85 mm length, 1.8 mm width, and 1.25 mm height. The device features a power dissipation rating of 400 mW and a breakover voltage of 36 V. It operates within a temperature range of -40°C to +125°C, with a maximum breakover current of 100 µA.

Feature Summary

• Bidirectional triggering capability for symmetrical gate control applications
• Surface-mount design utilizing the compact SOD-123-2 package
• High thermal stability supporting operation up to 125°C

Applications

• Triac gate triggering circuits
• Light dimmer switch designs
• Motor speed control systems

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via specific datasheets. Note that this part may be subject to discontinuation; check for active production status and last-time buy notifications before finalizing procurement plans.

Selection Notes

Select this component for applications requiring reliable bidirectional switching in low-power control circuits. Ensure the circuit design accommodates the 400 mW power dissipation limit. Verify that the operating environment remains within the specified -40°C to +125°C temperature range for optimal performance.

Part Context

This DIAC belongs to the small-signal semiconductor category produced by Taiwan Semiconductor. It serves as a critical interface component for triggering thyristors and triacs in AC power control applications. The SOD-123-2 packaging allows for automated surface-mount assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.