SPB160N04S203CTMA1

$2.14

Description：MOSFET N-CH 40V 160A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:e1439e174490 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

SPB160N04S203CTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 160A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPB160N04S203CTMA1

Description：MOSFET N-CH 40V 160A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7320 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7-3
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for SPB160N04S203CTMA1

SPB160N04S203CTMA1

Single FETs, MOSFETs Overview

The SPB160N04S2-03 is an N-channel enhancement mode OptiMOS power transistor manufactured by Infineon Technologies. It features a maximum drain-source voltage of 40 V and a continuous drain current rating of 160 A at 25°C case temperature. The device exhibits a typical on-state resistance of 2.3 mΩ, with a maximum limit of 2.9 mΩ. It supports a pulsed drain current of 640 A and operates within a junction temperature range of -55°C to +175°C. Packaged in a P-TO263-7-3 format, it includes avalanche and dv/dt ratings for robust performance.

Single FETs, MOSFETs Feature Summary

OptiMOS technology providing low on-resistance and high current capability
Avalanche rated for single pulse energy absorption
dv/dt rated for fast switching applications
Enhanced thermal management via low junction-to-case resistance

Single FETs, MOSFETs Applications

High-current DC-DC converter circuits
Motor control systems requiring robust switching
Power supply modules operating under harsh thermal conditions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67060-S6123 against the datasheet to ensure correct component identification. Confirm that the package marking P2N0403 matches the physical device received. Check for any updates regarding the IEC climatic category 55/175/56 compliance during the procurement process.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V N-channel MOSFET with high current handling is required. The low RDS(on) minimizes conduction losses, while the TO263-7 package facilitates effective heat dissipation. Ensure the application circuit accounts for the specified gate threshold voltage range and total gate charge requirements for optimal switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power transistors designed for efficiency and reliability. The SPB160N04S2-03 utilizes silicon technology to deliver high performance in a surface-mount package suitable for automated assembly processes.