SPW17N80C3FKSA1

$4.57

Description：MOSFET N-CH 800V 17A TO247-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:9ca2400e78b2 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

SPW17N80C3FKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 800V 17A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SPW17N80C3FKSA1

Description：MOSFET N-CH 800V 17A TO247-3
Series：CoolMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：177 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2320 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：227W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO247-3-1
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SPW17N80C3FKSA1

SPW17N80C3FKSA1

Single FETs, MOSFETs Overview

The SPW17N80C3FKSA1 is an N-Channel CoolMOS C3 power transistor in a PG-TO247-3 package. It features an 800 V drain-source breakdown voltage and a continuous drain current of 17 A at 25 °C case temperature. The device has a maximum on-state resistance of 0.29 Ω at 25 °C and a typical gate charge of 88 nC. Power dissipation reaches 227 W at 25 °C, with an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Built on revolutionary high-voltage CoolMOS technology for optimized switching performance
Rated for extreme dv/dt conditions to support high-speed switching applications
Capable of handling high peak currents and single-pulse avalanche energy
Compliant with RoHS standards and qualified according to JEDEC reliability targets

Single FETs, MOSFETs Applications

Industrial applications requiring high DC bulk voltage
Active clamp forward switching circuits
General-purpose high-voltage power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and packaging details. Confirm component lifecycle status as NRND (Not Recommended for New Designs) before initiating procurement. Ensure design reviews account for thermal management requirements specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust high-voltage switching capabilities within the CoolMOS C3 family. Evaluate thermal resistance parameters to ensure adequate heat sinking for the specified power dissipation. Consider the gate charge characteristics when designing drive circuits for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS C3 series, utilizing silicon technology for high-voltage power control. It is designed as a single N-Channel enhancement mode MOSFET. The product line focuses on reducing conduction and switching losses in industrial power conversion systems.