SQD50N06-09L_GE3

$3.49

Description：MOSFET N-CH 60V 50A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aad8a98fe282 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SQD50N06-09L_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 50A TO252. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQD50N06-09L_GE3

Description：MOSFET N-CH 60V 50A TO252
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：72 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3065 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for SQD50N06-09L_GE3

SQD50N06-09L_GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SQD50N06-09L_GE3 is an automotive-grade N-channel Power MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 50 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.009 Ω at VGS = 10 V and 0.013 Ω at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +175 °C, housed in a lead-free TO-252 (DPAK) package.

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards
TrenchFET power MOSFET architecture for optimized performance
100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

Automotive power distribution systems
High-side and low-side load switch applications
DC motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the suffix against official documentation to ensure correct configuration. Confirm that the component meets specific project requirements for RoHS compliance and halogen-free status as defined by IEC 61249-2-21. Cross-reference datasheet revision B with manufacturing updates to validate current production status and availability.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive-grade N-channel switching capabilities. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Verify that gate drive voltages align with the threshold characteristics to maintain optimal on-state resistance during operation.

Single FETs, MOSFETs Part Context

This device belongs to the SQD series of Vishay Siliconix MOSFETs, designed specifically for demanding automotive environments. The series utilizes advanced trench technology to deliver high current handling and low conduction losses within compact surface-mount packages suitable for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on electrical parameters without validating package compatibility and automotive qualification status.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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