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SQV120N10-3M8_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 120A TO262-3. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SQV120N10-3M8_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage, 120 A continuous drain current, and a maximum on-state resistance of 3.8 mΩ at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-262 package with a thermal resistance (junction-to-case) of 0.6 °C/W.
Verify the complete ordering suffix includes the GE3 designation to confirm lead-free and halogen-free compliance. Confirm the specific package variant matches the required PCB footprint. Ensure design validation accounts for the absolute maximum ratings provided in the official datasheet.
Select this component when high current handling and robust avalanche energy capability are required in automotive environments. Evaluate the thermal performance based on the specified junction-to-case resistance and safe operating area curves. Verify that the gate charge characteristics align with the driving circuit capabilities.
This part belongs to the Vishay Siliconix SQV series of automotive N-channel MOSFETs. These devices are engineered specifically for demanding automotive electrical architectures requiring high efficiency and ruggedness under extreme thermal conditions.
Consult the official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other brands or generic equivalents without comprehensive parameter matching.
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