Single FETs, MOSFETs SQV120N10-3M8_GE3 product image

SQV120N10-3M8_GE3

  • Description:MOSFET N-CH 100V 120A TO262-3
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tube

SKU:52e0361ac2df Category: Brand:

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SQV120N10-3M8_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 120A TO262-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQV120N10-3M8_GE3

  • Description:MOSFET N-CH 100V 120A TO262-3
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.8mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7230 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):250W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262-3
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for SQV120N10-3M8_GE3

SQV120N10-3M8_GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SQV120N10-3M8_GE3 is an automotive-grade N-channel MOSFET utilizing TrenchFET technology. It features a 100 V drain-source voltage, 120 A continuous drain current, and a maximum on-state resistance of 3.8 mΩ at VGS = 10 V. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-262 package with a thermal resistance (junction-to-case) of 0.6 °C/W.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture for low thermal resistance
  • 100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switch applications
  • DC motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering suffix includes the GE3 designation to confirm lead-free and halogen-free compliance. Confirm the specific package variant matches the required PCB footprint. Ensure design validation accounts for the absolute maximum ratings provided in the official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and robust avalanche energy capability are required in automotive environments. Evaluate the thermal performance based on the specified junction-to-case resistance and safe operating area curves. Verify that the gate charge characteristics align with the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQV series of automotive N-channel MOSFETs. These devices are engineered specifically for demanding automotive electrical architectures requiring high efficiency and ruggedness under extreme thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Consult the official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other brands or generic equivalents without comprehensive parameter matching.

SQV120N10-3M8_GE3SQV120N10-3M8_GE3

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