SSM3K7002BSU,LF

Single FETs, MOSFETs Overview

The SSM3K7002BSU,LF is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOS IV technology. It features a JEDEC SOT-323 package with a maximum drain-source voltage of 60 V and a continuous drain current of 200 mA. The device offers low ON-resistance, specified as 3.3 Ω max at VGS = 4.5 V, 2.6 Ω max at VGS = 5 V, and 2.1 Ω max at VGS = 10 V. Gate-source voltage is rated at ±20 V, with a power dissipation of 150 mW on an FR4 board. Operating temperature ranges from -55 °C to +150 °C junction temperature.

Single FETs, MOSFETs Feature Summary

• High-speed switching capability designed for rapid transition applications
• Low ON-resistance optimized for efficient signal conduction across various gate voltages
• Small physical footprint provided by the compact SOT-323 surface-mount package

Single FETs, MOSFETs Applications

• High-speed switching circuits
• Analog switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance with RoHS directives and environmental regulations relevant to your region before finalizing procurement. Confirm that the component meets all absolute maximum ratings for your intended operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a small form factor N-channel MOSFET is required for general electronics or analog switching. Consider the 60 V breakdown voltage and 200 mA current limits relative to circuit demands. Evaluate thermal management needs, as power dissipation is limited to 150 mW under standard mounting conditions.

Single FETs, MOSFETs Part Context

This part belongs to the SSM3K series of small-signal MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOS IV process technology to achieve performance characteristics suitable for portable and space-constrained electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions against the original datasheet.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (V_GSS) is rated at ±20 V.

How does the ON-resistance vary with gate voltage?

R_DS(ON) decreases as gate voltage increases: it is 3.3 Ω max at 4.5 V, 2.6 Ω max at 5 V, and 2.1 Ω max at 10 V.