STD18N60M6

Single FETs, MOSFETs Overview

The STD18N60M6 is an N-channel Power MOSFET from the MDmesh M6 family, housed in a DPAK package. It features a 600 V drain-source breakdown voltage and a maximum on-resistance of 280 mΩ at VGS = 10 V. The device supports a continuous drain current of 13 A at 25 °C case temperature and handles pulsed currents up to 38 A. Total power dissipation reaches 110 W under specified thermal conditions. Key electrical parameters include a gate threshold voltage ranging from 3.25 V to 4.75 V and a total gate charge of 16.8 nC.

Single FETs, MOSFETs Feature Summary

• MDmesh M6 technology provides reduced switching losses and lower RDS(on) per area compared to previous generations.
• Features low gate input resistance for efficient driving.
• Includes internal Zener protection between gate and source.
• Subjected to 100% avalanche testing for ruggedness.

Single FETs, MOSFETs Applications

• Switching applications
• LLC converters
• Boost PFC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (Type A2 or C3) required for your PCB footprint, as mechanical dimensions differ slightly between revisions. Confirm that the tape and reel packing format aligns with your automated assembly equipment specifications. Ensure thermal management design accounts for the junction-to-ambient resistance values provided in the datasheet for reliable operation within the specified temperature range.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency in hard-switching topologies is required due to its optimized switching behavior. The DPAK package suits applications where moderate current handling and surface-mount assembly are preferred over through-hole options. Consider the 600 V rating for general-purpose AC-DC and DC-DC conversion systems operating below this voltage limit.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M6 series of superjunction MOSFETs manufactured by STMicroelectronics. It represents an advancement over earlier MDmesh generations, focusing on improved figure-of-merit metrics. The DPAK form factor places it alongside other medium-power discrete semiconductors designed for compact power supply designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same MDmesh M6 family include STD16N60M6 and STF16N60M6, though these offer different current ratings and package types. Verify pinout compatibility and thermal characteristics before swapping with older MDmesh generation parts like the STD16N60 or STD11N60.

Single FETs, MOSFETs FAQ

What is the intrinsic gate resistance value?

The intrinsic gate resistance is typically 4.6 Ω at a frequency of 1 MHz.

Is the device suitable for unclamped inductive load switching?

Yes, the datasheet specifies avalanche characteristics including repetitive avalanche current and single pulse avalanche energy, indicating suitability for such conditions.