STD46N6F7

Single FETs, MOSFETs Overview

The STD46N6F7 is an N-channel STripFET F7 Power MOSFET manufactured by STMicroelectronics. It features a 60V drain-source voltage rating and supports a continuous drain current of 15A at case temperature. The device exhibits a typical on-resistance of 0.012 Ohm, with a maximum specified value of 14 mOhm at 10V gate drive. It is housed in a surface-mount DPAK package (3-pin 2+Tab) and offers a power dissipation capacity of 60W. The component operates up to a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes STripFET F7 technology for optimized low on-resistance performance
• Designed for high-efficiency switching applications with enhanced thermal stability
• Surface-mount DPAK package facilitates automated assembly and compact board layouts

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Motor control drives

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes to ensure compatibility with design requirements. Confirm that the component status is acceptable for new designs, as availability may vary. Cross-reference pinout configurations with the official STMicroelectronics documentation to prevent integration errors during PCB layout and assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V rating and 15A continuous current capability are required in a DPAK package. Consider the 0.012 Ohm typical on-resistance for efficiency calculations in low-voltage, high-current applications. Ensure thermal management strategies align with the 60W power dissipation limit and 175°C maximum operating temperature specifications provided in the technical data.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET F7 family of power MOSFETs from STMicroelectronics. The series is characterized by advanced cell architecture designed to minimize conduction losses while maintaining robust switching performance. These devices are engineered for general-purpose power switching applications requiring high reliability and efficient thermal handling in compact form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official STMicroelectronics substitution guides for verified alternatives. Do not assume functional equivalence with other 60V N-channel MOSFETs without verifying pinout, electrical parameters, and package dimensions against the original specification sheet.