STF30NM50N

Single FETs, MOSFETs Overview

The STF30NM50N is an N-channel enhancement mode Power MOSFET from the MDmesh II series by STMicroelectronics. It features a maximum drain-source voltage of 500 V and a continuous drain current of 27 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.115 Ω at VGS = 10 V and ID = 13.5 A. It utilizes TO-220FP packaging for through-hole mounting with a thermal resistance junction-to-case of 50 °C/W. The component supports a maximum operating junction temperature of 150 °C and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

• Developed using second-generation MDmesh technology combining vertical structure with strip layout
• Achieves low input capacitance and gate charge for high efficiency
• Features low gate input resistance
• Subject to 100% avalanche testing

Single FETs, MOSFETs Applications

• Switching applications
• High efficiency converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as the STF30NM50N designation corresponds to the TO-220FP form factor within the broader STB/I/F/P/W30NM50N product family. Confirm that the required electrical ratings align with the 500 V breakdown and 27 A continuous current limits specified in the datasheet. Ensure the application environment respects the 150 °C maximum junction temperature constraint.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust switching performance with minimized conduction losses. The low on-resistance and optimized gate charge characteristics make it suitable for demanding power conversion topologies. Consider the thermal management requirements associated with the TO-220FP package and its specific thermal resistance values to ensure reliable operation under load.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh II Power MOSFET family produced by STMicroelectronics. The series integrates advanced semiconductor processes to deliver superior performance metrics compared to previous generations. The STF30NM50N specifically represents the through-hole TO-220FP version of this high-voltage, high-current switch designed for industrial and general-purpose power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include STP30NM50N (TO-220) and STW30NM50N (TO-247). These variants share identical electrical specifications but differ in physical package dimensions and mounting style. Verify mechanical fit and thermal interface compatibility before substitution.