STL18N65M5

Single FETs, MOSFETs Overview

The STL18N65M5 is an N-channel enhancement mode MOSFET from the MDmesh M5 series, manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 710 V and a continuous drain current (Id) of 15 A. The device utilizes a PowerFLAT surface-mount package with 8 pins, measuring 6.35 mm in width, 5.4 mm in length, and 1 mm in height. Key electrical parameters include a maximum on-resistance (Rds(on)) of 240 mΩ, a typical gate charge (Qg) of 31 nC at specified Vgs, and a forward voltage (Vf) of 1.5 V. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation (Pd) of 57 W and a maximum gate-source voltage (Vgs) of 25 V.

Single FETs, MOSFETs Feature Summary

• MDmesh M5 technology combining vertical process with horizontal layout for low on-resistance
• PowerFLAT 8-pin surface mount package for high-power performance
• Low gate charge and input capacitance for excellent switching performance
• 100% avalanche tested for reliability

Single FETs, MOSFETs Applications

• High-efficiency power conversion applications
• Switch-mode power supplies (SMPS)
• Industrial motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific part number STL18N65M5 against official STMicroelectronics documentation to confirm active status and exact specifications. Ensure compatibility with the required PowerFLAT 8-pin footprint and thermal management requirements. Check for any recent product change notices or obsolescence announcements directly from the manufacturer before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with low on-resistance is required in a compact surface-mount format. The 710 V rating suits high-voltage AC-DC converters. Compare the 240 mΩ Rds(on) and 31 nC gate charge against alternative packages like D2PAK or TO-220 if higher current handling or different mounting styles are needed. Consider the 57 W power dissipation limit for thermal design.

Single FETs, MOSFETs Part Context

This device belongs to the MDmesh M5 family, which integrates innovative vertical process technology with the established PowerMESH horizontal layout. This combination aims to deliver extremely low on-resistance and superior efficiency for high-power applications. The PowerFLAT package provides a thermally efficient solution for space-constrained designs requiring robust performance in power conversion systems.

Single FETs, MOSFETs Replacement Considerations

STL21N65M5 offers similar MDmesh M5 technology in the same PowerFLAT 8x8 HV package but with lower on-resistance (175 mΩ typ.) and higher current (17 A). STB18N65M5 provides comparable electrical characteristics in a D2PAK-3 through-hole compatible SMD package.