STP14NF10

Single FETs, MOSFETs Overview

The STP14NF10 is an N-channel Power MOSFET from the STripFET™ II series, manufactured by STMicroelectronics. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 15 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 130 mΩ at 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 15.5 nC and an input capacitance (Ciss) of approximately 460 pF. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 60 W of power in a TO-220 package.

Single FETs, MOSFETs Feature Summary

• Utilizes STMicroelectronics' unique STripFET™ process technology to minimize input capacitance and gate charge for improved switching performance.
• Designed as an N-channel enhancement mode MOSFET with low on-resistance characteristics suitable for high-efficiency power applications.
• Constructed with a robust TO-220 through-hole package capable of handling significant thermal dissipation under case cooling conditions.

Single FETs, MOSFETs Applications

• High-frequency DC-DC converters
• Synchronous rectification circuits
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet revisions upon procurement. Confirm package variant compatibility, as STP14NF10 may be available in different housing styles such as TO-220AB or TO-220FP. Ensure storage conditions meet moisture sensitivity requirements prior to assembly. Cross-reference pinouts with official documentation to prevent installation errors during integration into existing designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and 15A current capacity are required with minimal gate drive losses. The low gate charge facilitates faster switching speeds compared to standard MOSFETs. Consider thermal management capabilities provided by the TO-220 package for high-power density designs. Evaluate Rds(on) specifications against system efficiency targets at the intended operating gate voltage.

Single FETs, MOSFETs Part Context

This part belongs to the STP14N family of N-channel Power MOSFETs utilizing STripFET™ technology. The series is engineered to offer superior trade-offs between conduction losses and switching losses. It serves as a key component in power electronics where efficiency and thermal performance are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

STP14NF12FP is a documented substitute with similar form factor but higher voltage rating. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets or exceeds the original circuit's voltage and current requirements without altering board layout dimensions.