STP4N80K5

Single FETs, MOSFETs Overview

The STP4N80K5 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh K5 technology. It features a typical on-resistance of 2.1 Ohms and a continuous drain current of 3 A. The device supports a drain-source voltage of 800 V and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• MDmesh K5 technology for reduced on-resistance
• Ultra-low gate charge for high efficiency
• Superior power density design

Single FETs, MOSFETs Applications

• High-efficiency power supplies
• Industrial motor control
• General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-220) against your PCB footprint requirements. Confirm RoHS compliance status with the manufacturer before finalizing orders. Ensure thermal management solutions align with the 60 W power dissipation rating under expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V blocking capability is required alongside moderate current handling. The TO-220 package facilitates through-hole mounting and heatsinking. Compare gate charge specifications against drive circuit capabilities to optimize switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh K5 family of very high voltage N-channel Power MOSFETs. It shares core technology with variants like STL4N80K5 and STF4N80K5 but differs in packaging and specific electrical characteristics tailored for different mounting and thermal needs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STD4N80K5, STF4N80K5, and STL4N80K5. Verify pinout compatibility and thermal resistance differences when replacing across different package types such as DPAK or PowerFLAT.