STTH8R03D

Single Diodes Overview

The STTH8R03D is a hyperfast recovery rectifier manufactured by STMicroelectronics, designed for high-frequency power conversion applications. It features a 300 V reverse voltage rating and an average forward current of 8 A. The device utilizes a dual anode common cathode configuration within a PowerFLAT 5x6 surface-mount package. Key electrical parameters include a maximum forward voltage of 1.3 V at 8 A, a reverse leakage current of 40 µA at 300 V, and a typical reverse recovery time of 27 ns. It supports a maximum surge current of 80 A and operates at junction temperatures up to +175 °C.

Single Diodes Feature Summary

• Hyperfast recovery characteristics optimized for high-frequency switching operations
• Dual anode common cathode configuration enabling bridge or synchronous rectifier topologies
• PowerFLAT 5x6 surface-mount packaging for compact board integration

Single Diodes Applications

• High frequency DC/DC converters
• Low voltage high frequency inverters
• Hard switching power supplies

Single Diodes Procurement Notes

Verify the specific suffix against official documentation, as the provided model lacks the standard TR designation found in distributor listings. Confirm package type and pinout compatibility with existing PCB footprints. Ensure thermal management requirements align with the PowerFLAT package's thermal resistance specifications. Cross-reference RoHS compliance status with the latest manufacturer declarations before finalizing procurement.

Single Diodes Selection Notes

Select this component when designing circuits requiring fast recovery times below 30 ns and moderate current handling up to 8 A. The dual anode configuration is suitable for full-bridge or half-bridge rectification needs. Consider the 300 V rating for low-voltage output stages. Evaluate the PowerFLAT package for space-constrained designs requiring efficient heat dissipation through the bottom pad.

Single Diodes Part Context

This part belongs to the STTH8R series of TURBOSWITCH diodes, engineered to minimize switching losses in associated MOSFETs during high dI/dt transitions. The series targets efficiency improvements in offline SMPS and DC/DC converters. The R variant specifically denotes hyperfast recovery performance competitive with GaAs devices, offering reduced snubber and heatsink sizes compared to standard recovery alternatives.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.