Single FETs, MOSFETs STWA68N65DM6 product image

STWA68N65DM6

$5.10
  • Description:DISCRETE
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk

SKU:e9a7ba811d05 Category: Brand:

  
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STWA68N65DM6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is DISCRETE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STWA68N65DM6

  • Description:DISCRETE
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:59mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id:4.75V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:3528 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):431W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 Long Leads
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for STWA68N65DM6

STWA68N65DM6

Single FETs, MOSFETs Overview

STWA68N65DM6 is an N-channel enhancement-mode Power MOSFET from the MDmesh DM6 series, rated for a maximum drain-source voltage of 650 V and a continuous drain current of 72 A. It features a typical on-resistance of 39 mΩ and a maximum power dissipation of 480 W in a TO-247 surface-mount package. The device operates within a temperature range of -55°C to 150°C, with a maximum gate-source voltage of 25 V and a typical forward voltage of 1.6 V.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • Fast-recovery body diode with low recovery charge and time
  • Extremely high dv/dt ruggedness and 100% avalanche tested
  • Zener-protected gate structure

Single FETs, MOSFETs Applications

  • High-efficiency bridge topologies
  • ZVS phase-shift converters
  • Automotive power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'AG' when ordering, as it denotes the automotive grade and Ecopack2 compliance required for this component. Confirm that the TO-247 long lead package matches your thermal management design. Ensure the procurement channel provides traceability documentation consistent with AEC-Q101 automotive quality requirements.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage blocking capability combined with low conduction losses. The MDmesh DM6 technology offers improved RDS(on) per area compared to previous generations. Consider the 72 A current rating and 480 W power dissipation against your thermal constraints. The fast-recovery body diode makes it suitable for hard-switching applications.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM6 family, which integrates fast-recovery diode characteristics with superjunction MOSFET performance. It is designed to replace older generation MDmesh devices in demanding high-efficiency applications. The TO-247 package provides robust mechanical stability and thermal performance for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

The STW68N65DM6-4AG is a related variant in the same series but utilizes a TO-247-4 package with an additional Kelvin source pin for enhanced switching performance. Verify package compatibility before substitution.

STWA68N65DM6STWA68N65DM6
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