SUM110N04-2M1P-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SUM110N04-2M1P-E3 is a lead-free N-channel Power MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and a maximum continuous drain current of 110 A at a case temperature of 25 °C. The device exhibits a typical on-state resistance of 0.0021 Ω at VGS = 10 V and 0.0024 Ω at VGS = 4.5 V. Key dynamic parameters include a total gate charge of 240 nC, an input capacitance of 18,800 pF, and a forward transconductance of 180 S. It operates within a junction temperature range of -55 °C to 150 °C and is housed in a TO-263 (D2PAK) surface-mount package.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• 100% tested for gate resistance and unclamped inductive switching
• Low on-state resistance across standard gate drive voltages

Single FETs, MOSFETs Applications

• Synchronous rectification circuits
• General-purpose power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging configuration. Confirm that the TO-263 footprint matches your PCB design requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance ratings under your expected operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel switch is required. The 40 V rating suits applications with moderate voltage spikes. Evaluate the 110 A current capability against your peak load requirements and ensure adequate heatsinking or copper area is available to maintain the junction temperature within the specified 150 °C limit during operation.

Single FETs, MOSFETs Part Context

This part belongs to the SUM series of N-channel MOSFETs from Vishay Siliconix. These devices are designed for high-efficiency power conversion applications requiring robust switching characteristics and low conduction losses. The SUM series typically utilizes advanced trench gate technology to achieve superior figure-of-merit values compared to older planar technologies.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified direct replacements. Cross-referencing requires matching voltage, current, and package specifications.