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Product Detailed Parameters
- Description:SCR MODULE 1800V 4460A DO200AD
- Series:-
- Mfr:Infineon Technologies
- Package:Tray
- Structure:Single
- Number of SCRs, Diodes:1 SCR
- Voltage - Off State:1.8 kV
- Current - On State (It (AV)) (Max):2180 A
- Current - On State (It (RMS)) (Max):4460 A
- Current - Non Rep. Surge 50, 60Hz (Itsm):44000A @ 50Hz
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Chassis Mount
- Package / Case:DO-200AD
- Voltage - Gate Trigger (Vgt) (Max):2 V
- Current - Gate Trigger (Igt) (Max):250 mA
- Current - Hold (Ih) (Max):300 mA
- Grade:-
- Qualification:-
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Overview
The T2180N16TOFVTXPSA1 is a high-power Silicon Controlled Rectifier (SCR) manufactured by Infineon Technologies. It belongs to the TOF VT series, designed for electrical triggering in phase control applications. The device features a disc package with a diameter of 111 mm and a height of 26 mm, utilizing ceramic insulation. Key electrical ratings include a maximum repetitive peak off-state voltage (VDRM/VRRM) of 1600 V and an average on-state current (ITAVM) of 2400 A at 180° electrical conduction. The component supports a non-repetitive surge current (ITSM) of 40,000 A for 10 ms. Thermal performance includes a maximum junction temperature (Tvj) of 125 °C and a thermal resistance from junction to case (RthJC) of 8.5 K/kW. The gate trigger voltage (Vgt) is typically 2 V, with a gate trigger current (Igt) of 150 mA.
Feature Summary
- Electrical triggering capability for precise phase control applications
- High surge current handling capacity for robust fault tolerance
- Disc package design optimized for clamp mounting systems
Applications
- Industrial motor drives requiring high power density
- HVDC transmission converter valves
- Large-scale welding equipment power supplies
Procurement Notes
Verify the specific suffix XPSA1 against official Infineon documentation to confirm tape-and-reel packaging or specific testing requirements. Confirm end-of-life status and last-time buy dates through authorized distributors. Ensure compatibility with existing clamp fixtures regarding the specified force range of 42 to 95 kN. Request full datasheets and application notes for proper thermal management design.
Selection Notes
Select this component when high current capacity above 2000 A is required alongside moderate voltage blocking up to 1600 V. Evaluate the thermal resistance and cooling interface requirements carefully due to the high power dissipation. Consider the electrical triggering nature for simplified gate drive circuits compared to optical triggering alternatives. Verify that the system can handle the significant surge currents during startup or fault conditions.
Part Context
This part is part of Infineon's high-power thyristor portfolio, specifically the TOF series designed for industrial and traction applications. The TOF VT designation indicates a vertically triggered structure within a disc form factor. These devices are engineered for reliability in harsh environments, adhering to strict quality standards for long-term operation in critical infrastructure.
Replacement Considerations
Direct replacements must match the 1600 V rating, 2400 A current capacity, and 111 mm disc dimensions. Check for equivalent thermal resistance and gate trigger characteristics. Consult Infineon for updated equivalents if this part is discontinued. Ensure mechanical mounting hole patterns and clamp force specifications align with existing designs.
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