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TGS2352-2-SM is listed in the RF Switches range at ChipApex. The manufacturer field lists Qorvo. Its product description is 0.5-12 GHZ 20 W GAN SPDT REF SWI. Review the specifications below when checking this part for your BOM.
The TGS2352-2-SM is a single-pole, double-throw (SPDT) reflective RF switch fabricated on Qorvo's QGaN25 0.25um GaN-on-SiC process. It operates from 0.5 to 12 GHz and handles up to 20W input power. Key electrical parameters include insertion loss of less than 1 dB and typical isolation of -35 dB. The device utilizes control voltages of 0 V and -40 V with a switching speed under 35 ns. It is housed in a compact 4x4 mm QFN-22 package.
Verify the specific suffix 'SM' indicates the surface-mount QFN-22 package variant when ordering. Confirm RoHS compliance status through official documentation as manufacturing processes may evolve. Ensure control voltage requirements match system design specifications before integration. Check for any recent product change notifications that might affect pinout or thermal characteristics.
Select this component for high-power microwave applications requiring low loss across a broad bandwidth. The GaN-on-SiC construction supports higher power density compared to silicon-based alternatives. Consider the 20W power limit and -35 dB isolation when designing signal paths. Evaluate thermal management needs due to the high power dissipation capabilities inherent in the semiconductor process.
This part belongs to Qorvo's TGS2352 series of high-power SPDT switches. It represents an evolution of earlier TriQuint designs, leveraging advanced GaN-on-SiC fabrication. The SM suffix denotes the specific surface-mount packaging format. It serves as a critical component in modern RF front-end modules where reliability and performance are paramount.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult Qorvo directly for qualified replacements or cross-reference options based on strict parameter matching.
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