Single Bipolar Transistors TIP116G product image

TIP116G

$0.45
  • Description:TRANS PNP DARL 80V 2A TO-220
  • Series:-

SKU:ecf6d7a3f2dc Category: Brand:

  
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TIP116G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 80V 2A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TIP116G

  • Description:TRANS PNP DARL 80V 2A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tube,Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
  • Current - Collector Cutoff (Max):2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for TIP116G

TIP116G

Single Bipolar Transistors Overview

The TIP116G is a PNP Darlington power transistor from onsemi, designed for general-purpose amplifier and low-speed switching applications. It features monolithic construction with built-in base-emitter shunt resistors. The device offers a collector-emitter sustaining voltage of 80 Vdc (min) and supports a continuous collector current of 2.0 Adc. It provides high DC current gain, typically 2500 at 1.0 Adc, with a maximum collector-emitter saturation voltage of 2.5 Vdc at 2.0 Adc. Total power dissipation reaches 50 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

  • High DC Current Gain
  • Low Collector-Emitter Saturation Voltage
  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Low-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and environmental compliance status. Confirm availability as some variants in this series may be discontinued or not recommended for new designs. Ensure thermal management meets the specified junction-to-case resistance requirements for the intended power dissipation levels.

Single Bipolar Transistors Selection Notes

Select the TIP116G when a PNP Darlington configuration is required for moderate current loads up to 2 Amperes. Consider the 80 V collector-emitter rating for appropriate voltage headroom. Evaluate thermal constraints carefully, as power dissipation drops significantly above 25°C ambient temperature due to derating requirements.

Single Bipolar Transistors Part Context

This component belongs to the TIP11x complementary silicon transistor family, which includes NPN (TIP110-112) and PNP (TIP115-117) variants. These transistors share similar structural characteristics but differ in polarity and breakdown voltage ratings. The TIP116G specifically serves as the PNP counterpart to the TIP111 NPN device within the 80 V class of this medium-power series.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other PNP Darlington transistors with comparable 80 V ratings and 2 A current capacity, such as the TIP116TU. Verify pinout compatibility and thermal performance specifications before substitution.

TIP116GTIP116G
$0.45
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