TK50E08K3,S1X(S

Single FETs, MOSFETs Overview

The TK50E08K3,S1X(S is a silicon N-channel power MOSFET from Toshiba's U-MOSVIII-H series, housed in a TO-220-3 package. It features an 80V drain-source breakdown voltage and a continuous drain current of 50A at case temperature. The device exhibits a maximum on-resistance of 12.2mΩ at 10V gate drive. Key electrical characteristics include a gate charge of 25nC and an input capacitance of 1700pF. It supports a maximum power dissipation of 72W and operates within a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes U-MOSVIII-H technology for enhanced performance
• Designed for through-hole mounting applications
• Single channel enhancement mode operation

Single FETs, MOSFETs Applications

• Power switching circuits
• DC-DC converter modules
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation when sourcing, as variations exist within the product line. Confirm RoHS compliance status with the supplier prior to ordering. Ensure the procurement channel provides authentic Toshiba Semiconductor and Storage components to guarantee reliability and adherence to specified electrical parameters.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching capabilities in a standard through-hole package. Consider the 12.2mΩ on-resistance for thermal management calculations. Verify that the required gate drive voltage aligns with the 10V specification for optimal conduction performance.

Single FETs, MOSFETs Part Context

This part belongs to the TK50E08 family of power MOSFETs manufactured by Toshiba Semiconductor and Storage. It is distinct from similar models like the TK100E08N1,S1X which offers higher current ratings. The component is categorized under single FETs and transistors within the broader semiconductor portfolio.

Single FETs, MOSFETs Replacement Considerations

The IRF8010PBF is listed as a similar substitute option. Verify pinout compatibility and electrical parameter alignment before implementation. Cross-reference datasheets to ensure functional equivalence in the target circuit design.