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TPCC8002-H(TE12L,Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 30V 22A 8TSON. Review the specifications below when checking this part for your BOM.
The TPCC8002-H is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOS VI-H technology. It features a 30 V drain-source voltage rating and a continuous DC drain current of 22 A. The device offers a typical drain-source ON-resistance of 7.6 mΩ at VGS = 4.5 V and a gate charge of 7.1 nC. Designed for high-speed switching, it supports applications in notebook PCs and portable equipment.
Verify the exact part number suffix against official Toshiba documentation before procurement. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized distributors. Ensure that the component meets all applicable export control regulations and safety standards required for your specific application environment.
Select this component when a low-voltage, high-current N-channel MOSFET is required for space-constrained designs. Consider the thermal resistance characteristics and safe operating area curves for proper heat dissipation planning. Evaluate the gate threshold voltage range to ensure compatibility with the intended logic-level drive signals.
This transistor belongs to Toshiba's U-MOS VI-H series, designed for high-efficiency power management solutions. It integrates advanced silicon technology to achieve superior switching performance within a small surface-mount package. The device is engineered to minimize both conduction and switching losses in modern electronic systems.
Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and thermal characteristics.
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