TSM2N7002AKCU RFG

Single FETs, MOSFETs Overview

The TSM2N7002AKCU RFG is an N-channel power MOSFET manufactured by Taiwan Semiconductor. It features a 60V drain-source voltage rating and a continuous drain current of 240mA at 25°C. The device utilizes trench technology to achieve a maximum on-resistance of 2.5Ω at VGS=10V and 3Ω at VGS=4.5V. Packaged in a compact SOT-323 surface-mount format, it offers low gate charge for fast switching and includes ESD protection up to 2.5kV (HBM).

Single FETs, MOSFETs Feature Summary

• Logic-level compatible design with low gate charge for rapid switching performance.
• Trench MOSFET technology ensures minimized conductive losses and robust operation.
• Integrated electrostatic discharge protection rated at 2.5kV (Human Body Model).

Single FETs, MOSFETs Applications

• Low side load switching
• Level shift circuits
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix 'RFG' against the manufacturer's official documentation to confirm the packaging configuration and reel specifications. Ensure that the component selection aligns with the absolute maximum ratings provided in the datasheet, particularly regarding thermal dissipation limits and junction temperature constraints during operation.

Single FETs, MOSFETs Selection Notes

This component is suitable for applications requiring logic-level drive compatibility and efficient small-signal switching. Designers should account for the thermal resistance characteristics when determining board layout requirements. Verify that the operating conditions remain within the specified safe operating area and that the gate-source voltage does not exceed the absolute maximum limits defined in the electrical specifications.

Single FETs, MOSFETs Part Context

The TSM2N7002AKCU belongs to the 2N7002 family of N-channel enhancement mode field-effect transistors. These devices are widely utilized as general-purpose switches in electronic circuits due to their high input impedance and low control power requirements. The specific variant described here integrates advanced trench technology to optimize performance metrics such as on-resistance and switching speed within a standard surface-mount package.

Single FETs, MOSFETs Replacement Considerations

Cross-reference alternative part numbers from other manufacturers only if they explicitly match the pinout, voltage ratings, and current capabilities documented in the official datasheets. Ensure any substitute component meets the same RoHS compliance and halogen-free standards required by the original specification.