Diode Arrays UGB8JCT-E3/81 product image

UGB8JCT-E3/81

  • Description:DIODE ARRAY GP 600V 4A TO263AB
  • Series:-

SKU:eb8fce4d5671 Category: Brand:

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UGB8JCT-E3/81 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 600V 4A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for UGB8JCT-E3/81

  • Description:DIODE ARRAY GP 600V 4A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):600 V
  • Current - Average Rectified (Io) (per Diode):4A
  • Voltage - Forward (Vf) (Max) @ If:1.75 V @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):50 ns
  • Current - Reverse Leakage @ Vr:30 µA @ 600 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for UGB8JCT-E3/81

UGB8JCT-E3/81

Diode Arrays Overview

The UGB8JCT-E3/81 is a dual common-cathode ultrafast plastic rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a TO-263AB (D2PAK) surface-mount package and provides an average forward current of 4 A per diode with a maximum repetitive peak reverse voltage of 500 V. The device exhibits an ultrafast reverse recovery time of 25 ns, low switching losses, and high forward surge capability up to 65 A. It operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast recovery time with soft recovery characteristics for reduced electromagnetic interference
  • Glass passivated chip junction ensuring high reliability under harsh conditions
  • High forward surge capability designed to withstand transient load currents
  • Low switching losses contributing to improved overall system efficiency

Diode Arrays Applications

  • High voltage power factor corrector circuits
  • Freewheeling diodes in inductive load switching
  • Secondary DC-to-DC rectification stages

Diode Arrays Procurement Notes

Verify the specific suffix against official documentation to confirm package type and compliance grade. Confirm availability status as manufacturing lifecycles change. Validate RoHS and WEEE directive compliance requirements prior to integration. Ensure thermal management design accounts for the specified junction-to-case resistance values during operation.

Diode Arrays Selection Notes

Select this component for applications requiring fast switching speeds and low reverse recovery charge. Compare the 500 V rating against circuit peak inverse voltages to ensure adequate safety margins. Evaluate the TO-263AB footprint compatibility with existing PCB layouts. Consider the thermal resistance specifications when designing heatsinking solutions for continuous high-current operations.

Diode Arrays Part Context

This part belongs to the UG(F,B)8HCT & UG(F,B)8JCT series from Vishay Semiconductors. It represents a dual common-cathode configuration optimized for high-frequency power conversion. The E3 suffix indicates consumer-grade compliance with lead-free soldering standards and whisker testing requirements.

Diode Arrays Replacement Considerations

UGB8JCTHE3/81

Diode Arrays FAQ

What is the typical softness factor for this device?

The typical softness factor (tb/ta) is approximately 0.9.

Does the component meet automotive qualification standards?

No, the standard UGB8JCT-E3/81 is consumer grade; the HE3 suffix denotes AEC-Q101 qualified automotive grade.

What is the maximum working reverse voltage?

The maximum working reverse voltage is 400 V.

UGB8JCT-E3/81UGB8JCT-E3/81

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