Single FETs, MOSFETs UJ4C075060L8S product image

UJ4C075060L8S

$9.91
  • Description:750V/60MO,SICFET,G4,TOLL
  • Series:-
  • Mfr:onsemi
  • Package:Bulk

SKU:be615851b0e3 Category: Brand:

  
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UJ4C075060L8S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is 750V/60MO,SICFET,G4,TOLL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for UJ4C075060L8S

  • Description:750V/60MO,SICFET,G4,TOLL
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):750 V
  • Current - Continuous Drain (Id) @ 25°C:27.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):12V
  • Rds On (Max) @ Id, Vgs:74mOhm @ 20A, 12V
  • Vgs(th) (Max) @ Id:6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs:37.8 nC @ 15 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):155W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TOLL
  • Package / Case:8-PowerSFN

Single FETs, MOSFETs datasheet and documents for UJ4C075060L8S

UJ4C075060L8S

Single FETs, MOSFETs Overview

The UJ4C075060L8S is a silicon carbide (SiC) MOSFET manufactured by onsemi, belonging to the UJ4C series. It features an N-channel configuration housed in a TOLL package (MO-229-8). The device provides a drain-source breakdown voltage of 750 V and a continuous drain current of 31 A at case temperature. Its maximum on-resistance is specified as 60 mΩ. The component operates within a junction temperature range of -55°C to +175°C and supports a power dissipation of 160 W.

Single FETs, MOSFETs Feature Summary

  • Utilizes silicon carbide technology for high thermal stability and efficiency
  • Designed for surface-mount assembly using the TOLL package format
  • Features standard enhancement-mode gate drive characteristics

Single FETs, MOSFETs Applications

  • High-frequency switching power supplies
  • Solar inverters and photovoltaic systems
  • Electric vehicle charging infrastructure
  • Uninterruptible power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L8S against official datasheets to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the MO-229-8 housing. Confirm that the 60 mΩ resistance rating meets system conduction loss requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 750 V SiC MOSFET with low on-resistance is required for compact designs. The TOLL package offers superior thermal performance compared to traditional TO-220 variants. Consider the 31 A current rating relative to peak load demands and ensure adequate heatsinking for the 160 W dissipation capability.

Single FETs, MOSFETs Part Context

This part belongs to the UJ4C family of silicon carbide MOSFETs from onsemi. These devices are engineered to replace silicon IGBTs and superjunction MOSFETs in high-efficiency applications. The series emphasizes reduced switching losses and improved thermal management for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include other UJ4C series parts such as UJ4C075044L8S or UJ4C075033L8S, provided their electrical ratings align with the application needs. Verify pinout compatibility and thermal interface requirements when substituting.

UJ4C075060L8SUJ4C075060L8S
$9.91
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