Diode Arrays V80100P-E3/45 product image

V80100P-E3/45

$1.56
  • Description:DIODE ARR SCHOT 100V 40A TO247AD
  • Series:TMBS®

SKU:e4213f6952b1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

V80100P-E3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 40A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for V80100P-E3/45

  • Description:DIODE ARR SCHOT 100V 40A TO247AD
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:780 mV @ 40 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:800 µA @ 100 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-247AD (TO-3P)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for V80100P-E3/45

V80100P-E3/45

Diode Arrays Overview

The V80100P-E3/45 is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features an 80 A maximum average forward rectified current per device and a 100 V repetitive peak reverse voltage rating. The component utilizes TO-247AD packaging with matte tin-plated leads. Key electrical parameters include a typical instantaneous forward voltage of 0.425 V at 10 A and 125 °C, and a peak forward surge current capability of 500 A. The junction temperature range extends from -40 °C to +150 °C.

Diode Arrays Feature Summary

  • Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • High efficiency operation suitable for demanding power applications
  • Low thermal resistance characteristics for effective heat dissipation

Diode Arrays Applications

  • High frequency inverters
  • Switching power supplies
  • Freewheeling diodes
  • DC-to-DC converters
  • Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and delivery mode. Confirm RoHS compliance status and lead-free terminal plating specifications prior to integration. Ensure thermal management designs account for the specified junction temperature limits and derating curves provided in the datasheet.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low conduction losses. Evaluate the thermal resistance and case temperature requirements against the system's cooling capabilities. Consider the 100 V reverse voltage rating relative to circuit operating conditions to ensure adequate safety margins during transient events.

Diode Arrays Part Context

This part belongs to the V80100 series of dual high-voltage Trench MOS Barrier Schottky rectifiers. It is designed as a complementary pair within a single TO-247AD package, facilitating compact circuit layouts for bridge or half-bridge configurations. The E3 suffix indicates consumer grade compliance with specific environmental standards.

Diode Arrays Replacement Considerations

V80100PW-M3/4W

Diode Arrays FAQ

What is the maximum average forward rectified current per diode?

The maximum average forward rectified current is 40 A per diode.

Does the component meet RoHS directives?

Yes, the component is in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.

What is the typical thermal resistance from junction to case?

The typical thermal resistance per diode is 1.5 °C/W.

V80100P-E3/45V80100P-E3/45
$1.56
Buy Now

Recent News