V8P12-M3/86A

$0.83

Description：DIODE SCHOTTKY 120V 8A TO277A
Series：eSMP®, TMBS®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f97efaa80a38 Category: Single Diodes Brand: Vishay General Semiconductor - Diodes Division

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

V8P12-M3/86A is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 120V 8A TO277A. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for V8P12-M3/86A

Description：DIODE SCHOTTKY 120V 8A TO277A
Series：eSMP®, TMBS®
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：120 V
Current - Average Rectified (Io)：8A
Voltage - Forward (Vf) (Max) @ If：840 mV @ 8 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：300 µA @ 120 V
Capacitance @ Vr, F：-
Mounting Type：Surface Mount
Package / Case：TO-277, 3-PowerDFN
Supplier Device Package：TO-277A (SMPC)
Operating Temperature - Junction：-40°C ~ 150°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for V8P12-M3/86A

V8P12-M3/86A

Single Diodes Overview

The V8P12-M3/86A is a high current density surface-mount TMBS (Trench MOS Barrier Schottky) rectifier manufactured by Vishay General Semiconductor. It features an SMPC (TO-277A) package and offers a maximum repetitive peak reverse voltage of 120 V with a maximum average forward rectified current of 8.0 A. The device exhibits ultra-low forward voltage, typically 0.53 V at 4 A and 0.63 V at 8 A. It supports a peak forward surge current of 140 A and operates within a junction temperature range of -40 to +150 °C.

Single Diodes Feature Summary

Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
Features a very low profile typical height of 1.1 mm suitable for automated placement
Meets MSL level 1 per J-STD-020 with a maximum peak reflow temperature of 260 °C

Single Diodes Applications

Low voltage high frequency inverters
Freewheeling applications
DC/DC converters
Polarity protection circuits

Single Diodes Procurement Notes

Verify the specific ordering code suffix against the manufacturer's documentation to confirm compliance requirements. The base part number HM3 indicates halogen-free and RoHS-compliant status. Confirm that the requested revision code matches the required automotive or commercial grade specifications before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for designs requiring high efficiency in low voltage environments due to its ultra-low forward voltage characteristics. Ensure the thermal management strategy accounts for the specified thermal resistance values. Validate that the operating junction temperature remains within the -40 to +150 °C range during all operational phases.

Single Diodes Part Context

This device belongs to the eSMP® series of surface-mount rectifiers from Vishay General Semiconductor. It is designed as a high current density alternative to traditional through-hole packages, providing robust performance in compact PCB layouts while maintaining high reliability standards for industrial and automotive electronics.