VB20M120C-E3/4W

Diode Arrays Overview

The VB20M120C-E3/4W is a dual high-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device supports a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 20 A, with 10 A per diode. It exhibits an ultra-low forward voltage drop of 0.55 V at 5 A and 125 °C. The component withstands a peak forward surge current of 120 A and operates within a junction temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• Designed for high efficiency operation in power conversion applications
• Complies with MSL level 1 standards and LF maximum peak reflow temperature of 245 °C

Diode Arrays Applications

• Solar cell junction box bypass diodes for protection
• DC forward current circuits without reverse bias
• General-purpose high-efficiency rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the delivery mode and packaging format. The E3 suffix indicates RoHS compliance and commercial grade material categorization. Confirm that the required quantity matches the tube or tape-and-reel specifications provided in the ordering information section of the datasheet.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-voltage applications up to 120 V. The D2PAK package provides robust thermal performance suitable for heatsink mounting. Ensure the application does not exceed the 120 A surge current rating or the 150 °C maximum junction temperature limit during operation.

Diode Arrays Part Context

This part belongs to the VB20M series of dual high-voltage Trench MOS Barrier Schottky rectifiers from Vishay. The series is engineered to minimize conduction losses through advanced semiconductor processing. The E3 variant specifically denotes lead-free terminals that are matte tin plated and compliant with JESD 201 class 2 whisker test requirements.

Diode Arrays Replacement Considerations

Direct substitutes include the VB20M120C-M3/I and VB20M120C-E3/8W variants within the same product family. These alternatives share identical electrical characteristics but differ in packaging quantities and halogen-free status.

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 5 A?

The typical instantaneous forward voltage is 0.65 V at 25 °C and 0.55 V at 125 °C.

Does the component meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STD-020 standards.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.