VB40100G-E3/4W

Diode Arrays Overview

The VB40100G-E3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a TO-263AB (D2PAK) surface-mount package with a common cathode configuration. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 20 A per diode, totaling 40 A per device. Key electrical parameters include a peak forward surge current of 200 A, a typical thermal resistance of 5.0 °C/W per diode, and a maximum junction temperature of 150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Provides high efficiency operation combined with low thermal resistance for effective heat dissipation.
• Features matte tin plated leads that are solderable per J-STD-002 standards.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific suffix 'VB' corresponds to the TO-263AB package when sourcing. Confirm RoHS compliance via the E3 suffix designation. Ensure the ordering code matches the required delivery mode, as tubes and tape-and-reel options exist within this product family. Cross-reference the document number 88970 for the latest technical specifications.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage at high currents to minimize conduction losses. The D2PAK package offers a compact footprint suitable for surface-mount designs. Evaluate the thermal resistance characteristics against the system's cooling requirements to ensure the junction temperature remains within the specified operating range during peak load conditions.

Diode Arrays Part Context

This part belongs to the V40100G series of dual TMBS rectifiers from Vishay. The 'VB' prefix specifically identifies the TO-263AB (D2PAK) surface-mount variant. Other variants in the series include V40100G for TO-220AB and VF40100G for ITO-220AB packages, all sharing identical electrical ratings but differing in mechanical form factors.

Diode Arrays Replacement Considerations

Direct substitutes within the same electrical rating and package include VF40100G-E3/4W (ITO-220AB) or V40100G-E3/4W (TO-220AB) if mechanical adaptation is possible. Verify pinout compatibility and thermal management requirements before substituting across different package types.

Diode Arrays FAQ

What is the typical thermal resistance per diode for the VB40100G?

The typical thermal resistance from junction to case per diode is 5.0 °C/W.

Does the VB40100G support lead-free soldering processes?

Yes, the terminals are matte tin plated and meet JESD 201 class 1A whisker test requirements, supporting lead-free assembly.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy is rated at 230 mJ per diode at TJ = 25 °C with L = 90 mH.