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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The VBT2045C-E3/8W is a dual low-voltage Trench MOS Barrier Schottky rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device supports a maximum repetitive peak reverse voltage of 45 V and a total average forward rectified current of 20 A, with 10 A per diode. Peak forward surge current capability is rated at 160 A. Forward voltage drop characteristics include a typical value of 0.33 V at 5 A and 0.41 V at 10 A. Operating junction temperature ranges from -40 °C to +150 °C.
Verify the specific ordering suffix /8W corresponds to tape and reel packaging containing 800 units per reel. Confirm RoHS compliance and material categorization details via official Vishay documentation before procurement. Ensure thermal management aligns with the specified junction-to-case thermal resistance values during integration.
Select this component for designs requiring low forward voltage drops at moderate currents up to 10 A per diode. The D2PAK package facilitates surface mount assembly while providing adequate heat dissipation capabilities. Verify that the 45 V reverse voltage rating exceeds the maximum circuit operating voltage under all transient conditions.
This part belongs to the VBT series of dual low-voltage Trench MOS Barrier Schottky rectifiers. It is designed as an alternative to standard silicon rectifiers where lower conduction losses are critical. The E3 suffix indicates lead-free terminals compliant with RoHS standards.
Direct replacements must match the 45 V rating, 20 A total current capacity, and D2PAK footprint. Verify equivalent forward voltage characteristics and thermal resistance parameters to ensure performance parity in existing designs.
The device meets MSL level 1 requirements with a maximum peak reflow temperature of 245 °C.
The device has a total average forward rectified current of 20 A, distributed as 10 A per diode in its common cathode configuration.
The typical instantaneous forward voltage drop is 0.33 V when tested at a forward current of 5 A.
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
Read More
VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
Read MoreVBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
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VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
Read More
VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
Read More
VBT2045C-E3/8W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is…
Read More