VBT4060C-M3/4W

Diode Arrays Overview

The VBT4060C-M3/4W is a dual Trench MOS Barrier Schottky rectifier in a D2PAK (TO-263AB) package. It features a common cathode configuration with two independent diodes. Key electrical parameters include a maximum repetitive peak reverse voltage of 60 V and a total maximum average forward rectified current of 40 A (20 A per diode). The device exhibits an ultra-low forward voltage drop, specified as 0.32 V at 5.0 A and 125 °C, or 0.48 V at 20 A and 25 °C. Peak forward surge current is rated at 240 A. Thermal resistance from junction to case is 1.5 °C/W per diode. Operating junction temperature ranges from -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion applications.
• Complies with MSL level 1 requirements and withstands a maximum peak lead temperature of 245 °C.
• Constructed with halogen-free, RoHS-compliant materials and matte tin plated leads.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters

Diode Arrays Procurement Notes

Verify the complete part number VBT4060C-M3/4W against official Vishay documentation to ensure correct package type and suffix specifications. Confirm that the M3 suffix aligns with required environmental compliance standards such as RoHS and halogen-free status. Validate thermal management requirements against the specified junction-to-case thermal resistance values provided in the datasheet before finalizing procurement.

Diode Arrays Selection Notes

Select this component for applications requiring a dual Schottky rectifier with a 60 V rating and high current capacity. The D2PAK package offers robust thermal performance for surface mount assembly. Ensure the design accounts for the 20 A per diode limit when calculating average forward current derating curves. Verify that the operating environment stays within the specified -40 to +150 °C junction temperature range for reliable operation.

Diode Arrays Part Context

This device belongs to Vishay's VBT series of dual Trench MOS Barrier Schottky rectifiers. The series is designed to replace traditional PN junction rectifiers in high-frequency applications where lower forward voltage drop is critical for efficiency. The M3 suffix indicates specific material and packaging attributes compliant with modern environmental directives.

Diode Arrays Replacement Considerations

Consult official Vishay substitution guides for verified equivalents. Do not assume compatibility based solely on voltage and current ratings; verify pinout, package dimensions, and thermal characteristics.

Diode Arrays FAQ

What is the typical forward voltage drop at 5.0 A?

The typical instantaneous forward voltage drop is 0.32 V at 5.0 A and 125 °C, and 0.43 V at 5.0 A and 25 °C.

Is the device suitable for high-frequency switching applications?

Yes, the datasheet lists high frequency converters and switching power supplies as typical applications due to its Schottky technology.

What is the maximum repetitive peak reverse voltage?

The maximum repetitive peak reverse voltage (VRRM) is 60 V.