VI20120C-M3/4W

Diode Arrays Overview

The VI20120C-M3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a TO-262AA surface-mount package. The device supports a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 2 x 10 A per diode. Key electrical characteristics include a peak forward surge current of 120 A, a typical thermal resistance of 2.8 °C/W, and a maximum operating junction temperature of 150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Designed for high efficiency operation with low thermal resistance.
• Compliant with RoHS directives and halogen-free standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix /4W corresponds to the tube delivery mode containing 50 units per tube. Confirm that the component meets JESD 201 class 1A whisker test requirements via the M3 suffix designation. Ensure compatibility with matte tin plated leads solderable per J-STD-002 standards before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring a dual common cathode Schottky rectifier in a surface-mount format. The TO-262AA package provides a balance between thermal performance and mounting density. Consider the 120 V rating and 10 A per diode capacity when designing circuits for switching power supplies or freewheeling applications where low forward voltage drop is critical for system efficiency.

Diode Arrays Part Context

This part belongs to the V20120C/VI20120C family of dual high voltage TMBS rectifiers from Vishay. The VI prefix indicates the surface-mount TO-262AA variant, distinct from the through-hole TO-220AB version. These devices are engineered to replace standard fast recovery rectifiers in high-frequency applications, offering superior switching characteristics and lower conduction losses due to the absence of reverse recovery charge.

Diode Arrays Replacement Considerations

Direct substitutes within the same Vishay family include the V20120C-M3/4W for through-hole TO-220AB implementations. Cross-manufacturer replacements must match the 120 V reverse voltage, 20 A total current rating, and dual common cathode configuration while ensuring compatible thermal resistance and package dimensions.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage for the VI20120C?

The maximum repetitive peak reverse voltage (VRRM) is 120 V.

Does the VI20120C exhibit reverse recovery charge?

No, as a Schottky rectifier utilizing Trench MOS technology, it does not suffer from reverse recovery charge issues associated with standard PN junction diodes.

What is the typical thermal resistance per diode?

The typical thermal resistance from junction to case (RθJC) is 2.8 °C/W per diode.