Diode Arrays VS-63CTQ100PBF product image

VS-63CTQ100PBF

  • Description:DIODE ARR SCHOT 100V 30A TO2203
  • Series:-

SKU:096690776fb9 Category: Brand:

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VS-63CTQ100PBF is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 30A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-63CTQ100PBF

  • Description:DIODE ARR SCHOT 100V 30A TO2203
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:820 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:300 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VS-63CTQ100PBF

VS-63CTQ100PBF

Diode Arrays Overview

The VS-63CTQ100PBF is a Vishay Schottky rectifier featuring a common cathode configuration with two independent diodes in a TO-220AB package. It supports a maximum DC reverse voltage of 100 V and delivers a total average forward current of 60 A (30 A per leg). The device exhibits a low forward voltage drop, typically 0.69 V at 30 A and 125 °C junction temperature. It operates reliably up to a maximum junction temperature of 175 °C and includes a guard ring for enhanced ruggedness.

Diode Arrays Feature Summary

  • Optimized proprietary barrier technology enables reliable operation at elevated temperatures up to 175 °C junction temperature.
  • Low forward voltage drop design minimizes conduction losses during high-frequency switching applications.
  • Guard ring structure provides enhanced mechanical strength and long-term reliability under harsh conditions.

Diode Arrays Applications

  • Switching power supplies
  • DC-DC converters
  • Freewheeling diodes
  • Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The PbF designation indicates lead-free and RoHS compliance, while the -N3 suffix denotes additional halogen-free characteristics. Confirm that the required packaging quantity matches the manufacturer's standard tube specifications for the selected variant.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high surge current handling and low forward voltage drops at elevated temperatures. Ensure the thermal management system can maintain the case temperature within limits defined by the maximum average forward current ratings. Validate that the 100 V reverse voltage rating exceeds the peak working reverse voltage in the target application.

Diode Arrays Part Context

This part belongs to Vishay's Q series of Schottky rectifiers, designed specifically for high-efficiency power conversion. It utilizes high-purity, high-temperature epoxy encapsulation to ensure moisture resistance and mechanical durability. The device is qualified according to JEDEC standards for ruggedness and performance consistency.

Diode Arrays Replacement Considerations

The VS-63CTQ100-N3 serves as a verified alternative offering identical electrical characteristics with halogen-free compliance. Verify pinout compatibility and thermal resistance parameters when substituting components from other manufacturers to ensure equivalent circuit performance.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The maximum peak one-cycle non-repetitive surge current is 1500 A for a 5 μs sine wave or 300 A for a 10 ms sine wave.

How does the forward voltage drop vary with temperature?

The forward voltage drop decreases as temperature increases; it is typically 0.78 V at 25 °C and 0.64 V at 125 °C when conducting 30 A.

Is this device suitable for avalanche energy applications?

Yes, the device has a rated non-repetitive avalanche energy of 11.25 mJ per leg at a junction temperature of 25 °C.

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