VS-MBRD660CT-M3

Diode Arrays Overview

The VS-MBRD660CT-M3 is a high-performance Schottky rectifier featuring a dual common cathode configuration within a DPAK (TO-252AA) surface-mount package. It provides a maximum average forward current of 6 A per device and supports a maximum repetitive peak reverse voltage of 60 V. The component utilizes silicon technology with a guard ring structure to enhance ruggedness and long-term reliability. Key electrical characteristics include a typical forward voltage drop of 0.65 V at 125 °C and a maximum junction temperature rating of 150 °C.

Diode Arrays Feature Summary

• Low forward voltage drop for improved efficiency
• Guard ring structure for enhanced ruggedness and long-term reliability
• High frequency operation capability
• Surface mountable in a small footprint DPAK outline

Diode Arrays Applications

• Switching power supplies
• Converters
• Free-wheeling diodes
• Battery charging circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details, such as tube or tape-and-reel quantities. Ensure compliance requirements match project specifications, particularly regarding halogen-free status and lead-free terminations. Cross-reference the document number 93325 for the most current technical parameters and mechanical dimensions before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when low forward voltage drop and high-frequency operation are required in space-constrained designs. The center tap configuration allows for efficient use of board space compared to discrete solutions. Verify that the thermal resistance and maximum junction temperature ratings align with the intended operating environment and heat dissipation capabilities of the target application circuit.

Diode Arrays Part Context

This part belongs to the Vishay MBRD series of surface mount Schottky rectifiers. It shares the same physical outline and general performance profile as the VS-MBRD650CT-M3, differing primarily in the maximum repetitive peak reverse voltage rating. Both variants utilize the popular DPAK package to provide robust performance in compact electronic assemblies requiring reliable rectification.

Diode Arrays Replacement Considerations

The VS-MBRD650CT-M3 serves as a direct functional substitute if the application voltage does not exceed 50 V. Other manufacturers offering equivalent 60 V, 3 A per leg Schottky rectifiers in the TO-252AA package may be considered, provided their forward voltage and thermal characteristics meet the design requirements.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The maximum peak one-cycle non-repetitive surge current is 490 A for a 5 μs sine pulse or 75 A for a 10 ms sine pulse.

Does the -M3 suffix indicate environmental compliance?

Yes, the -M3 suffix indicates that the device is halogen-free, RoHS compliant, and has lead (Pb)-free terminations.

What is the typical reverse leakage current at elevated temperatures?

The typical reverse leakage current is 15 mA at a junction temperature of 125 °C and rated reverse voltage.