VS-MBRD660CTTRL-M3

Diode Arrays Overview

The VS-MBRD660CTTRL-M3 is a surface mount, center tap Schottky rectifier series manufactured by Vishay Semiconductors. It features a DPAK (TO-252AA) outline and contains two silicon elements in a common cathode configuration. The device supports a maximum average forward current of 6 A per device (3 A per leg) and offers a maximum repetitive peak reverse voltage of 60 V. Key electrical characteristics include a typical forward voltage drop of 0.65 V at 125 °C and a maximum junction temperature range from -40 to +150 °C.

Diode Arrays Feature Summary

• Low forward voltage drop for high efficiency
• Guard ring structure for enhanced ruggedness and long-term reliability
• High frequency operation capability
• Meets MSL level 1 requirements with a maximum peak reflow temperature of 260 °C

Diode Arrays Applications

• Disk drives
• Switching power supplies
• Converters
• Freewheeling diodes
• Battery charging circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging orientation and quantity. The 'TRL' suffix indicates a tape and reel format with left-oriented components on a 13-inch diameter reel. Confirm RoHS compliance and halogen-free status as defined by the '-M3' designation before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a compact surface mount solution with low forward voltage drop is required. Ensure the application operates within the specified 60 V reverse voltage limit and does not exceed the 3 A per leg average forward current rating. Consider the thermal resistance values provided in the datasheet for adequate heat dissipation design in the target PCB layout.

Diode Arrays Part Context

This part belongs to the VS-MBRD650CT-M3 and VS-MBRD660CT-M3 series of high-performance Schottky rectifiers. It shares the same physical DPAK outline and internal guard ring technology but differs in its maximum repetitive peak reverse voltage rating. The series is designed specifically for applications demanding small footprints and efficient power conversion.

Diode Arrays Replacement Considerations

Direct substitutes within the same package and specification family include the VS-MBRD650CT-M3 variants, which share identical mechanical dimensions and thermal characteristics but offer a lower 50 V reverse voltage rating. Verify that the reduced voltage rating meets the circuit requirements before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The maximum peak one-cycle non-repetitive surge current is 490 A for a 5 μs sine pulse or 75 A for a 10 ms sine pulse.

Does the device meet specific moisture sensitivity levels?

Yes, the device meets MSL level 1 per J-STD-020, allowing for a maximum peak reflow temperature of 260 °C.

What is the typical reverse leakage current at elevated temperatures?

The typical reverse leakage current is 15 mA at a junction temperature of 125 °C when rated reverse voltage is applied.