Diode Arrays VX80M100PWHM3/P product image

VX80M100PWHM3/P

$2.88
  • Description:DIODE ARR SCHOT 100V 40A TO247AD
  • Series:-

SKU:ecfd1d52a983 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

VX80M100PWHM3/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 40A TO247AD. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VX80M100PWHM3/P

  • Description:DIODE ARR SCHOT 100V 40A TO247AD
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):40A
  • Voltage - Forward (Vf) (Max) @ If:840 mV @ 40 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:600 µA @ 100 V
  • Operating Temperature - Junction:-40°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for VX80M100PWHM3/P

VX80M100PWHM3/P

Diode Arrays Overview

The Vishay VX80M100PWHM3/P is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier housed in a TO-247AD 3L package. It features a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 80 A per device, or 40 A per diode. The component supports a peak forward surge current of 550 A and operates within a junction temperature range of -40 °C to +175 °C. Electrical characteristics include a typical instantaneous forward voltage of 0.44 V at 10 A and 125 °C, with a maximum of 0.84 V at 40 A and 25 °C.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • Features common cathode configuration suitable for high efficiency operation
  • Includes AEC-Q101 qualification for automotive application reliability

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix HM3 against official documentation to confirm halogen-free status, RoHS compliance, and AEC-Q101 automotive qualification. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and access to the correct technical datasheet revision.

Diode Arrays Selection Notes

Select this component for applications requiring high surge capability and low conduction losses at elevated temperatures. The TO-247AD 3L package provides robust thermal management capabilities. Confirm that the circuit design accommodates the specified 100 V reverse voltage rating and the 80 A total current capacity under expected operating conditions.

Diode Arrays Part Context

This part belongs to the VX80M100PW series of dual high voltage TMBS rectifiers manufactured by Vishay General Semiconductor. The series is designed to offer superior performance compared to standard Schottky diodes, particularly in terms of forward voltage reduction and thermal stability across wide operating temperature ranges.

Diode Arrays Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, package dimensions, and thermal characteristics to ensure functional compatibility without redesigning the host circuitry.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175 °C.

Does this component meet automotive standards?

Yes, the HM3 suffix indicates that the device is AEC-Q101 qualified.

What is the typical forward voltage at low current?

The typical instantaneous forward voltage is 0.44 V when tested at 10 A and a junction temperature of 125 °C.

VX80M100PWHM3/PVX80M100PWHM3/P
$2.88
Buy Now

Recent News