Diode Arrays WN3S30100CXQ product image

WN3S30100CXQ

$0.85
  • Description:DIODE ARR SCHOTT 100V 15A TO220F
  • Series:-

SKU:304fb604d913 Category: Brand:

  
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WN3S30100CXQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARR SCHOTT 100V 15A TO220F. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for WN3S30100CXQ

  • Description:DIODE ARR SCHOTT 100V 15A TO220F
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:770 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:50 µA @ 100 V
  • Operating Temperature - Junction:150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:TO-220F
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for WN3S30100CXQ

WN3S30100CXQ

Diode Arrays Overview

The WN3S30100CXQ is a silicon Schottky diode manufactured by WeEn Semiconductors. It features a dual common cathode configuration housed in a TO-220F-3 through-hole package. The device supports a maximum repetitive reverse voltage of 100 V and an average forward current of 15 A. Key electrical characteristics include a typical forward voltage of 880 mV at rated current, a non-repetitive peak forward surge current capability of 242 A, and a low reverse leakage current of 40 nA. It operates within a junction temperature range of -40 °C to +175 °C.

Diode Arrays Feature Summary

  • Dual common cathode configuration for efficient circuit design
  • Low forward voltage drop for improved efficiency
  • High thermal stability with extended operating temperature range
  • Robust surge current handling capability

Diode Arrays Applications

  • DC-DC converter output rectification
  • Free-wheeling diodes in inductive load circuits
  • Power supply input protection stages

Diode Arrays Procurement Notes

Verify the specific suffix 'Q' against the manufacturer's official datasheet to confirm packaging details and marking variations. Ensure the TO-220F-3 lead form matches the target PCB footprint requirements. Cross-reference the RoHS compliance status with the latest environmental declaration provided by WeEn Semiconductors before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual Schottky arrangement is required in a through-hole assembly. The 15 A rating suits moderate power applications where low switching losses are critical. Compare the 100 V breakdown voltage against system transient spikes to ensure adequate safety margins. Evaluate the thermal resistance of the TO-220F-3 package relative to the expected heat dissipation in the final enclosure.

Diode Arrays Part Context

This part belongs to the WN3S30 series of Schottky rectifiers from WeEn Semiconductors. The series utilizes silicon technology to provide fast switching speeds and low forward voltage drops. The TO-220F-3 package offers a balance between high current capacity and ease of manual or automated through-hole mounting compared to surface-mount alternatives.

Diode Arrays FAQ

What is the maximum junction temperature for the WN3S30100CXQ?

The maximum operating junction temperature is +175 °C.

Is the WN3S30100CXQ available in a surface-mount package?

No, the WN3S30100CXQ is specifically packaged in the TO-220F-3 through-hole format.

What is the reverse leakage current specification?

The reverse leakage current is specified as 40 nA under standard test conditions.

WN3S30100CXQWN3S30100CXQ
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