ZXTP2012GTA

Single Bipolar Transistors Overview

The ZXTP2012GTA is a PNP medium power low saturation transistor in an SOT-223 package. It provides -5.5A continuous collector current and -15A peak pulse current. The device features a collector-emitter breakdown voltage of -60V, maximum saturation voltage of -70mV at -1A, and equivalent on-resistance of 39mΩ at -5A. DC current gain is specified up to -10A. Operating temperature range spans from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Extremely low equivalent on-resistance for minimized on-state losses
• High gain characteristics maintained at high currents
• Qualified to AEC-Q101 standards for automotive reliability
• Halogen-free and antimony-free green device construction

Single Bipolar Transistors Applications

• DC-DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required reel size and tape width configuration. Confirm compliance with RoHS directives and halogen-free requirements if mandated by project specifications. Ensure the component meets AEC-Q101 qualification standards when used in automotive applications. Cross-reference datasheet revision numbers to confirm thermal resistance values align with intended PCB copper area mounting conditions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high continuous current handling with minimal voltage drop. The SOT-223 package supports significant power dissipation when mounted on adequate copper areas. Verify that base drive currents can support the specified hFE ranges at target load currents. Consider thermal derating curves based on ambient operating temperatures and available board space for heat sinking.

Single Bipolar Transistors Part Context

This part belongs to Diodes Incorporated's Zetex series of medium power transistors. It serves as a complementary or alternative solution to other low saturation PNP devices. The SOT-223 outline provides a robust surface-mount footprint suitable for high-current power management designs.

Single Bipolar Transistors Replacement Considerations

ZXTP2012G

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at -100V.

How is the DC current gain specified?

hFE is specified up to -10A collector current, ensuring high gain hold-up capability under heavy loads.

Is the device suitable for automotive use?

Yes, the ZXTP2012GTA is qualified to AEC-Q101 standards for high reliability in automotive environments.