1N1125

Single Diodes Overview

The Microchip Technology 1N1125 is a silicon power rectifier diode designed for high-current applications. It features a single-phase, one-element configuration housed in a hermetically sealed DO-4 (DO-203AA) stud mount package. The device supports a maximum repetitive reverse voltage of 300V and a continuous forward current of 12A. It exhibits a maximum forward voltage drop of 2.2V at rated current and a low reverse leakage current of 5µA. The component operates within a junction temperature range of -65°C to +150°C and can withstand a non-repetitive peak surge current of 25A.

Single Diodes Feature Summary

• Hermetically sealed glass-metal construction for reliable operation in harsh environments
• Stud mount design facilitates efficient thermal management and mechanical stability
• Standard recovery characteristics suitable for general-purpose power conversion

Single Diodes Applications

• DC power supply rectification circuits
• Industrial motor drive systems
• Battery charging equipment

Single Diodes Procurement Notes

Verify the specific manufacturer source, as historical production involves entities such as Microsemi and Roving Networks. Confirm RoHS compliance status, as listings vary between compliant and non-compliant versions. Ensure the package type matches the required DO-4 stud mount specification. Validate the electrical ratings against the specific datasheet revision to confirm the 300V and 12A parameters are accurate for the procured unit.

Single Diodes Selection Notes

Select this component when a robust, hermetically sealed rectifier is required for high-current DC applications. The DO-4 package necessitates stud mounting, which impacts PCB layout and thermal design considerations. Compare the 300V rating with system voltage peaks to ensure adequate margin. Consider the 2.2V forward voltage drop for efficiency calculations in power loss assessments.

Single Diodes Part Context

The 1N1125 belongs to the standard silicon power rectifier family, historically produced by Microsemi Corporation and later acquired by Microchip Technology. It shares the 1N112x series designation with variants offering different voltage ratings. The device is characterized by its rugged DO-4 package, distinguishing it from smaller surface-mount or axial lead alternatives in similar power classes.

Single Diodes Replacement Considerations

Direct substitutes include the JANTX1N1125AR and 1N1125RA, which share identical electrical specifications and package dimensions. Verify that alternative sources provide the same hermetic sealing and stud mount configuration to maintain compatibility with existing thermal and mechanical designs.