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1N1187R is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD REV 300V 35A DO5. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N1187R is a silicon standard recovery rectifier housed in a DO-5 stud mount package. It features a repetitive peak reverse voltage of 300 V and a continuous forward current rating of 35 A. The device exhibits a maximum forward voltage of 1.2 V at 35 A and a reverse leakage current of 10 mA at 140 °C. Thermal resistance from junction to case is 0.25 °C/W, supporting operation within a temperature range of -55 °C to 150 °C.
Verify the specific part marking against official datasheet documentation to confirm the component type and terminal configuration. Ensure that the ordering suffix matches the required polarity variant, as the 'R' designation indicates reverse polarity where the stud functions as the anode rather than the cathode.
Select this component when a robust silicon diode with high thermal stability is required for medium-power applications. The low thermal resistance facilitates efficient heat dissipation through the stud mount interface. Consider the 300 V blocking voltage and 35 A current capacity to ensure adequate margins for the target circuit design.
This component belongs to the 1N1183 thru 1N1187R series of silicon standard recovery diodes manufactured by GeneSiC Semiconductor. The series provides various voltage ratings ranging from 50 V to 300 V while maintaining a consistent 35 A current rating and DO-5 package form factor across all variants.
Compatible substitutes include other 300 V, 35 A standard recovery diodes in the DO-5 package. Verify that replacement parts match the 0.25 °C/W thermal resistance and operating temperature limits.
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