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1N1190AR is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STD REV 600V 40A DO203AB. Review the specifications below when checking this part for your BOM.
The Microchip Technology 1N1190AR is a standard recovery rectifier diode designed for high-power applications. It features a maximum DC reverse voltage (Vr) of 600 V and an average forward current (Io) rating of 35 A. The device utilizes a DO-203AB (DO-5) package with stud mount installation. Electrical characteristics include a maximum forward voltage (Vf) of 1.4 V at 110 A and a reverse leakage current of 10 µA at 600 V. The junction temperature range spans from -65°C to 175°C, ensuring reliability in demanding environments.
Verify the specific suffix 'R' against the manufacturer's official datasheet to confirm packaging details and compliance status. Ensure the component meets MIL-PRF-19500/297 requirements if military grade certification is necessary for the application. Confirm RoHS non-compliance status aligns with project environmental regulations before procurement.
Select this component when a 600 V reverse voltage rating and 35 A continuous current capacity are required. The DO-203AB package necessitates stud mount thermal management solutions. Consider the standard recovery speed (>500 ns) suitability for low-frequency AC-to-DC conversion rather than high-speed switching applications.
This part belongs to the 1N1190 series of silicon rectifier diodes manufactured by Microchip Technology. It shares electrical specifications with other variants in the series but differs in packaging or qualification levels. The DO-203AB form factor is standard for high-power discrete diodes requiring direct heatsink attachment.
Consult the official datasheet for cross-reference information. Verify that any substitute maintains the 600 V Vr, 35 A Io, and DO-203AB package compatibility.
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