Single Diodes 1N1199A product image

1N1199A

$3.00
  • Description:DIODE STANDARD 50V 12A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk

SKU:3b590c1360c1 Category: Brand:

  
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1N1199A is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD 50V 12A DO4. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for 1N1199A

  • Description:DIODE STANDARD 50V 12A DO4
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):12A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 12 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:10 µA @ 50 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Supplier Device Package:DO-4
  • Operating Temperature - Junction:-65°C ~ 200°C
  • Grade:-
  • Qualification:-

Single Diodes datasheet and documents for 1N1199A

1N1199A

Single Diodes Overview

The GeneSiC Semiconductor 1N1199A is a silicon standard recovery rectifier diode housed in a DO-4 (DO-203AA) stud-mount package. It supports a repetitive peak reverse voltage of 50 V and a continuous forward current of 12 A. The device operates within a junction temperature range of -55 °C to 150 °C, with a maximum non-repetitive surge forward current of 240 A. Electrical characteristics include a forward voltage of 1.1 V at 12 A and a thermal resistance from junction to case of 2.00 °C/W.

Single Diodes Feature Summary

  • High surge capability for handling transient current loads
  • Not sensitive to electrostatic discharge
  • Standard polarity configuration with the stud serving as the cathode

Single Diodes Applications

  • General purpose rectification circuits
  • Power supply input stages
  • Industrial control systems

Single Diodes Procurement Notes

Verify that the component matches the specified 50 V rating and 12 A current capacity for your application requirements. Confirm the DO-4 package dimensions and stud mounting specifications align with your heatsink or chassis design. Ensure the standard polarity orientation meets your circuit layout needs before finalizing procurement.

Single Diodes Selection Notes

Select this component when a robust silicon rectifier with high surge tolerance is required for low-voltage applications. The DO-4 package facilitates efficient heat dissipation through direct stud mounting. Consider the 150 °C maximum operating temperature for environments requiring elevated thermal stability.

Single Diodes Part Context

This part belongs to a series of silicon standard recovery diodes ranging from 50 V to 600 V reverse voltage ratings. The family shares common electrical characteristics such as 12 A continuous current and identical thermal resistance values. Variations within the series are primarily defined by their specific voltage blocking capabilities while maintaining consistent physical packaging.

Single Diodes Replacement Considerations

Compatible substitutes include the 1N1200A, 1N1204A, and 1N1206A, which share identical current and thermal ratings but offer higher voltage blocking capabilities.

1N1199A1N1199A
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