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1N1199A is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD 50V 12A DO4. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N1199A is a silicon standard recovery rectifier diode housed in a DO-4 (DO-203AA) stud-mount package. It supports a repetitive peak reverse voltage of 50 V and a continuous forward current of 12 A. The device operates within a junction temperature range of -55 °C to 150 °C, with a maximum non-repetitive surge forward current of 240 A. Electrical characteristics include a forward voltage of 1.1 V at 12 A and a thermal resistance from junction to case of 2.00 °C/W.
Verify that the component matches the specified 50 V rating and 12 A current capacity for your application requirements. Confirm the DO-4 package dimensions and stud mounting specifications align with your heatsink or chassis design. Ensure the standard polarity orientation meets your circuit layout needs before finalizing procurement.
Select this component when a robust silicon rectifier with high surge tolerance is required for low-voltage applications. The DO-4 package facilitates efficient heat dissipation through direct stud mounting. Consider the 150 °C maximum operating temperature for environments requiring elevated thermal stability.
This part belongs to a series of silicon standard recovery diodes ranging from 50 V to 600 V reverse voltage ratings. The family shares common electrical characteristics such as 12 A continuous current and identical thermal resistance values. Variations within the series are primarily defined by their specific voltage blocking capabilities while maintaining consistent physical packaging.
Compatible substitutes include the 1N1200A, 1N1204A, and 1N1206A, which share identical current and thermal ratings but offer higher voltage blocking capabilities.
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