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1N3064 is listed in the Single Diodes range at ChipApex. The manufacturer field lists onsemi. Its product description is DIODE STANDARD 75V 300MA DO35. Review the specifications below when checking this part for your BOM.
The onsemi 1N3064 is a small signal rectifier diode manufactured by Fairchild Semiconductor, housed in the DO-35 axial leaded package. It features a maximum repetitive reverse voltage of 75 V and an average rectified forward current rating of 300 mA. The device supports a non-repetitive peak forward surge current of up to 4 A for microsecond pulses. Electrical characteristics include a maximum forward voltage of 1.0 V at 10 mA and a reverse leakage current of 100 nA at 50 V. Thermal performance specifies a power dissipation of 500 mW and a junction-to-ambient thermal resistance of 300 °C/W.
Verify the manufacturer origin carefully, as the 1N3064 was originally produced by Fairchild Semiconductor, which has undergone corporate restructuring. Confirm that the specific lot matches the required datasheet revision (Rev. A) to ensure alignment with the specified absolute maximum ratings and electrical characteristics provided in the official documentation.
Select this component when a robust silicon rectifier with a 75 V reverse voltage rating and 300 mA continuous current capacity is required. The DO-35 through-hole package facilitates easy integration into legacy designs. Ensure the application operates within the 175 °C junction temperature limit and respects the 500 mW power dissipation constraint under steady-state conditions.
The 1N3064 belongs to the family of small signal diodes designed for general-purpose rectification and switching tasks. Originally documented by Fairchild Semiconductor, it serves as a standard component for low-power electronic circuits requiring reliable performance in axial packages. Its specifications define it as a single-element silicon device optimized for stability in consumer and industrial electronics.
Cross-reference with other manufacturers offering equivalent DO-35 packaged diodes rated for 75 V and 300 mA. Verify that substitute parts meet the same 4 ns reverse recovery time and 2 pF capacitance limits to maintain circuit timing and efficiency without modification.
The maximum operating junction temperature is 175 °C, while the storage temperature range extends from -65 °C to +200 °C.
It supports a non-repetitive peak forward surge current of 4.0 A for a pulse width of 1.0 microsecond, and 1.0 A for a pulse width of 1.0 second.
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