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1N3211 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD 300V 15A DO5. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N3211 is a silicon standard recovery rectifier diode housed in a DO-5 (DO-203AB) metal stud mount package. It features a maximum repetitive peak reverse voltage of 300 V and a continuous forward current rating of 15 A. The device supports an operating junction temperature range from -55 °C to +150 °C with a thermal resistance of 0.65 °C/W. Standard polarity designates the stud as the cathode, while the reverse polarity variant (1N3211R) designates the stud as the anode.
Verify the specific polarity suffix required for your circuit topology before ordering. Confirm that the manufacturer designation aligns with GeneSiC Semiconductor specifications rather than other vendors using similar part numbers. Ensure the DO-5 mounting interface matches your heatsink or chassis requirements. Check for RoHS compliance status if environmental regulations apply to your assembly process.
Select this component when a ruggedized silicon rectifier with high surge tolerance is needed. The DO-5 package facilitates direct mounting to cooling structures. Consider the 1N3211R variant if the circuit design requires the stud terminal to function as the anode connection point. Evaluate the thermal resistance against your system's heat dissipation capabilities.
This device belongs to the 1N3208 through 1N3211 series of silicon standard recovery diodes. All members share identical physical dimensions and thermal characteristics within the DO-5 package family. The series provides scalable voltage ratings from 50 V to 300 V while maintaining a consistent 15 A current capacity across all variants.
Cross-reference with other manufacturers' DO-5 stud rectifiers rated at 300 V and 15 A. Verify mechanical compatibility of the 1/4-28 UNF thread and stud diameter. Ensure electrical parameters such as forward voltage drop and reverse leakage meet the original design constraints.
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