1N3767

Single Diodes Overview

The GeneSiC Semiconductor 1N3767 is a silicon standard recovery rectifier diode housed in a DO-5 (DO-203AB) stud package. It provides a repetitive peak reverse voltage of 900 V and supports a continuous forward current of 35 A. The device features a maximum non-repetitive surge forward current of 475 A under half-sine wave conditions. Electrical characteristics include a forward voltage of 1.2 V at 35 A and a thermal resistance from junction to case of 0.25 °C/W. Operating and storage temperature ranges extend from -55 °C to 150 °C.

Single Diodes Feature Summary

• High surge capability for handling transient current loads
• Not sensitive to electrostatic discharge
• Standard polarity configuration with the stud serving as the cathode

Single Diodes Applications

• General purpose rectification
• Power supply circuits requiring high current handling
• Industrial equipment power stages

Single Diodes Procurement Notes

Verify the specific manufacturer source, as GeneSiC Semiconductor data may be distributed through third-party entities like Diodemodule.com. Confirm the exact datasheet revision date and ensure the component matches the DO-5 package dimensions provided. Cross-reference the 900V rating against system requirements to avoid over-specification or under-rating. Check for any specific ordering suffixes that might alter polarity or packaging details before finalizing procurement.

Single Diodes Selection Notes

Select this component when a robust silicon standard recovery diode is required for high-current applications up to 35 A. The low thermal resistance facilitates efficient heat dissipation in stud-mounted configurations. Ensure the circuit design accommodates the 900 V reverse voltage rating and the specified operating temperature range. Consider the physical mounting constraints of the DO-5 package during PCB or chassis layout planning.

Single Diodes Part Context

This part belongs to the 1N3765 through 1N3768R series of silicon standard recovery diodes. All variants in this family share identical electrical characteristics regarding current and thermal performance, differing primarily in their repetitive peak reverse voltage ratings. The 1N3767 specifically targets applications requiring 900 V blocking capability within this standardized product line.

Single Diodes Replacement Considerations

Direct substitutes within the same series include the 1N3765, 1N3766, and 1N3768, provided their respective voltage ratings meet the circuit's reverse voltage requirements. Verify that any replacement maintains the same DO-5 package form factor and thermal resistance specifications.