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1N3893 is listed in the Single Diodes range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE STANDARD 600V 12A DO4. Review the specifications below when checking this part for your BOM.
The GeneSiC Semiconductor 1N3893 is a silicon fast recovery rectifier diode housed in a DO-4 (DO-203AA) stud mount package. It supports a maximum repetitive peak reverse voltage of 400 V and a continuous forward current of 12 A. The device features a maximum reverse recovery time of 200 ns and a thermal resistance from junction to case of 2.0 °C/W. Operating temperatures range from -55 °C to +150 °C, with a surge non-repetitive forward current capability of 90 A.
Verify the specific polarity configuration required for the design, as standard units have a cathode stud while 'R' variants feature reversed leads with an anode stud. Confirm that the mounting surface temperature remains within specified limits during operation to maintain the rated current capacity. Ensure compatibility with the DO-4 mechanical footprint and terminal specifications.
Select this component when a high-current, high-voltage rectifier with fast switching speeds is needed. The DO-4 package allows direct mounting to heatsinks for effective thermal management. Consider the 200 ns recovery time for efficiency in hard-switching topologies compared to standard recovery diodes.
This part belongs to the 1N3889 through 1N3893 series of silicon fast recovery rectifiers. The series shares identical electrical ratings except for the reverse voltage breakdown, which scales from 50 V to 400 V across the model numbers. All variants utilize the same DO-4 stud mount package and thermal characteristics.
Direct substitutes include other manufacturers' DO-4 packaged fast recovery diodes with matching 400 V reverse voltage and 12 A forward current ratings. Verify that replacement parts meet the 200 ns maximum reverse recovery time requirement.
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