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Product Detailed Parameters
- Description:DIODE STANDARD 100V 150MA DO35
- Series:-
- Mfr:Taiwan Semiconductor Corporation
- Package:Tape & Reel (TR)
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):100 V
- Current - Average Rectified (Io):150mA
- Voltage - Forward (Vf) (Max) @ If:1 V @ 100 mA
- Speed:Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):4 ns
- Current - Reverse Leakage @ Vr:5 µA @ 75 V
- Capacitance @ Vr, F:4pF @ 0V, 1MHz
- Mounting Type:Through Hole
- Package / Case:DO-204AH, DO-35, Axial
- Supplier Device Package:DO-35
- Operating Temperature - Junction:-65°C ~ 150°C
- Grade:-
- Qualification:-
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Overview
The 1N4448 R0G is a silicon planar switching diode manufactured by Taiwan Semiconductor Corporation in the DO-35 glass package. It features a repetitive peak reverse voltage of 100 V and a forward current rating of 150 mA. The device supports a non-repetitive square wave peak forward surge current of 2 A with a maximum power dissipation of 500 mW. Electrical characteristics include a maximum reverse recovery time of 4 ns, a junction capacitance of 4 pF at 1 MHz, and a forward voltage of up to 1 V at 100 mA. The operating junction temperature range spans from -65 °C to +150 °C.
Feature Summary
- Fast switching capability with a reverse recovery time under 4 ns
- High surge current handling capacity for transient protection
- Hermetically sealed glass construction for environmental stability
Applications
- Switching mode power supply (SMPS)
- On-board DC/DC converter circuits
- Lighting applications
- Power adapters
Procurement Notes
Verify that the ordering suffix 'R0G' corresponds to the specified reel packing configuration as documented in the manufacturer's ordering information. Confirm RoHS compliance status through official datasheets or material composition declarations prior to integration into production assemblies.
Selection Notes
Select this component when high-speed signal rectification or fast switching operations are required within low-power constraints. Ensure the circuit design accommodates the 150 mA continuous forward current limit and the 100 V reverse voltage breakdown threshold. Evaluate thermal management requirements based on the 500 mW power dissipation rating and ambient temperature conditions.
Part Context
This part belongs to the 1N4148 series family produced by Taiwan Semiconductor Corporation. It shares identical physical dimensions and electrical specifications with variants such as 1N4148 and 1N914B within the same product line. The 'R0G' suffix specifically denotes the packaging format rather than altering the fundamental semiconductor performance parameters.
Replacement Considerations
Official documentation confirms that parts designated with suffixes A0, A0G, R0, and R0G are physically identical without functional differences. Cross-reference with other manufacturers' 1N4448 equivalents only if they meet the specific 100 V reverse voltage and 4 ns reverse recovery time criteria.
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