1N4454-TR

Single Diodes Overview

The Vishay 1N4454-TR is a silicon epitaxial planar small-signal diode housed in the DO-35 glass case. It features a maximum average rectified forward current of 150 mA and a reverse voltage rating of 75 V, with a peak reverse voltage capability of 100 V. The device exhibits a fast switching characteristic with a reverse recovery time of 4 ns. Electrical specifications include a maximum forward voltage drop of 1.0 V at 10 mA and a leakage current of 100 nA at 50 V reverse bias. The component supports a maximum junction temperature of 175 °C.

Single Diodes Feature Summary

• Utilizes silicon epitaxial planar technology for reliable performance
• Designed as a fast switching diode with rapid reverse recovery
• Constructed within a DO-35 glass case for through-hole mounting

Single Diodes Applications

• High-frequency signal processing circuits
• General-purpose rectification tasks
• Fast switching applications requiring low capacitance

Single Diodes Procurement Notes

Verify the specific ordering suffix to confirm the reel or tape packaging configuration, as the -TR designation indicates tape-and-reel supply. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer documentation before integration. Ensure the procurement channel sources authentic Vishay Semiconductors products to guarantee adherence to the specified electrical limits and mechanical dimensions.

Single Diodes Selection Notes

Select this component when a small-signal diode with a 75 V reverse voltage rating and 150 mA forward current capacity is required. The 4 ns reverse recovery time makes it suitable for high-speed switching environments where standard recovery diodes may introduce excessive delay. Consider the DO-35 package constraints for PCB layout and thermal management requirements relative to the 500 mW power dissipation limit.

Single Diodes Part Context

This part belongs to the Vishay 1N4454 series of small-signal diodes. It is manufactured by Vishay Semiconductors, formerly General Semiconductor. The device is categorized under silicon epitaxial planar diodes designed for general-purpose electronic applications requiring fast switching capabilities and robust thermal performance within a standard axial leaded package.

Single Diodes Replacement Considerations

Cross-reference with other 1N4454 variants from different manufacturers ensuring identical DO-35 packaging and matching electrical parameters such as 75 V reverse voltage and 150 mA forward current. Verify that substitute components maintain the same 4 ns reverse recovery time and 1.0 V forward voltage drop to ensure circuit compatibility.