1N4500E3/TR

Overview

The Microchip Technology 1N4500E3/TR is a hermetically sealed, metallurgically bonded switching diode qualified per MIL-PRF-19500/403. It features a DO-35 glass package with copper-clad steel leads and tin/lead finish. Key electrical parameters include a maximum leakage current of 100 nA at 75 V reverse voltage, a forward voltage range of 0.47 V to 0.56 V at 250 mA, and a breakdown voltage minimum of 80 V. The device supports an operating temperature from -65°C to +175°C, surge currents up to 4 A (1 µs), and exhibits a capacitance of 4.0 pF.

Feature Summary

• Hermetically sealed double plug construction for environmental stability
• Military qualification compliant with MIL-PRF-19500/403 standards
• High thermal endurance supporting operation up to 175°C

Applications

• High-reliability military electronic systems
• Computer diode applications requiring fast switching
• Signal processing circuits in extreme environments

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. Ensure that the requested variant matches the required lead finish and qualification level. Cross-reference datasheet specifications with procurement requirements to validate compliance with intended operational conditions and regulatory standards before finalizing orders.

Selection Notes

Select this component when hermetic sealing and military-grade reliability are mandatory. The DO-35 outline provides a compact form factor suitable for through-hole mounting. Evaluate the forward voltage drop and leakage characteristics against circuit sensitivity requirements. Confirm that the copper-clad steel lead material meets mechanical stress constraints within the target assembly process.

Part Context

This part belongs to the 1N4500 series of general-purpose switching diodes manufactured by Microchip Technology. The series is characterized by its robust metallurgical bonding and glass encapsulation designed for harsh environments. It serves as a standard solution for high-speed rectification and signal switching where long-term stability and radiation hardness are critical design factors.

Replacement Considerations

Direct substitutes must match the MIL-PRF-19500/403 qualification and DO-35 package dimensions. Verify equivalent forward voltage and breakdown voltage ratings to ensure circuit compatibility. Check lead material specifications to prevent galvanic corrosion or mechanical failure during soldering operations.

FAQ

What is the maximum surge current rating for the 1N4500E3/TR?

The device supports a sine wave surge current of 0.5 A and a 1 µs pulse surge current of 4 A.

Does the 1N4500E3/TR feature hermetic sealing?

Yes, the diode utilizes a hermetically sealed glass package constructed with a double plug design.