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Product Detailed Parameters
- Description:DIODE STANDARD 1000V 40A DO203AB
- Series:-
- Mfr:Microchip Technology
- Package:Bulk
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):1000 V
- Current - Average Rectified (Io):40A
- Voltage - Forward (Vf) (Max) @ If:1.19 V @ 90 A
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:10 µA @ 1000 V
- Capacitance @ Vr, F:-
- Mounting Type:Stud Mount
- Package / Case:DO-203AB, DO-5, Stud
- Supplier Device Package:DO-203AB (DO-5)
- Operating Temperature - Junction:-65°C ~ 200°C
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Overview
The Microchip Technology 1N4529 is a silicon power rectifier diode designed for high-voltage and high-current applications. It features a maximum repetitive peak reverse voltage of 1000V and an average forward rectified current rating of 40A. The device utilizes a DO-203AB (DO-5) axial leaded package with screw-type mounting terminals, ensuring robust mechanical stability in industrial environments. Constructed from silicon, this single-phase, one-element diode provides reliable performance for general-purpose rectification tasks requiring substantial power handling capabilities.
Feature Summary
- High voltage blocking capability up to 1000V
- Robust 40A average forward current rating
- Screw-type terminal mounting for secure installation
- Axial leaded DO-203AB package design
Applications
- Industrial power supply rectification
- High-voltage DC power conversion systems
- Battery charging equipment
- Welding machine power stages
Procurement Notes
Verify the manufacturer source carefully, as the 1N4529 designation has been transferred between Microsemi Corporation and Microchip Technology. Confirm the specific datasheet version matches your required electrical tolerances and thermal characteristics. Ensure the physical package dimensions align with your existing PCB or chassis mounting constraints before finalizing procurement orders.
Selection Notes
Select this component when application requirements demand a standard silicon rectifier capable of handling 1000V reverse bias and 40A continuous forward current. The screw-terminal configuration makes it suitable for heavy-duty assemblies where vibration resistance is critical. Consider thermal management strategies, as high current flow generates significant heat that must be dissipated through appropriate heatsinking or airflow solutions.
Part Context
This component belongs to the standard silicon rectifier diode family, historically associated with the 1N series numbering system. Originally manufactured by Microsemi Corporation, production rights were transferred to Microchip Technology. It serves as a rugged solution for power electronics, bridging the gap between low-power signal diodes and specialized high-frequency switching devices.
Replacement Considerations
Direct substitutes include other 1000V 40A axial rectifiers such as the 1N54xx series variants scaled for higher currents or equivalent DO-203AB packages from other manufacturers like Vishay or Littelfuse. Verify pinout compatibility and thermal resistance values when cross-referencing alternative part numbers.
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