1N456ATR

Overview

The onsemi 1N456ATR is a small signal switching diode housed in a DO-35 through-hole package. It features a peak reverse voltage of 30 V and supports a maximum forward current of 500 mA with a surge current capacity of 4 A. The device exhibits a low leakage current of 25 nA and a forward voltage drop of 1 V. Operating temperatures range from -65 °C to +175 °C, ensuring reliability across diverse environmental conditions.

Feature Summary

• High conductance characteristics for efficient signal switching
• Low leakage current performance for improved circuit isolation
• Robust thermal stability suitable for extended temperature ranges

Applications

• General purpose signal rectification
• High-speed switching circuits
• Clamping and protection applications

Procurement Notes

Verify the specific datasheet revision and compliance documentation directly with onsemi or authorized distributors before integration. Confirm that the DO-35 axial leaded package aligns with your PCB footprint requirements. Ensure the operating voltage and current ratings meet your design specifications under all expected load conditions.

Selection Notes

Select this component when a standard silicon switching diode with moderate reverse voltage blocking capability is required. The DO-35 package facilitates easy manual assembly and prototyping. Consider the 500 mA continuous current rating against your circuit's peak demands to ensure adequate safety margins during operation.

Part Context

This part belongs to the 1N456 series of general-purpose diodes manufactured by onsemi. These components are widely utilized in consumer electronics and industrial equipment where reliable signal processing is essential. The series offers a balance of performance and cost-effectiveness for mass production environments.

Replacement Considerations

Consult official cross-reference lists for verified equivalents. Generic replacements may differ in leakage current or switching speed.