1N4607/TR

1N4607/TR

$1.94
  • Description:DIODE STD REV 85V 200MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)

SKU:d6f3415db875 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STD REV 85V 200MA DO204AH
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Technology:Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):85 V
  • Current - Average Rectified (Io):200mA
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 400 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):10 ns
  • Current - Reverse Leakage @ Vr:100 µA @ 50 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:DO-204AH, DO-35, Axial
  • Supplier Device Package:DO-204AH (DO-35)
  • Operating Temperature - Junction:-65°C ~ 200°C

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1N4607/TR

Overview

The Microchip Technology 1N4607/TR is a silicon switching diode housed in a DO-35 glass package. It features a peak inverse voltage of 85 V and an average rectified current of 200 mA. The device exhibits a forward voltage drop of 1.10 V at 400 mA and a reverse leakage current of 100 µA at 50 V. Its peak surge current rating is 1.0 A, with a power dissipation capacity of 500 mW. The component operates within a temperature range of -65°C to +200°C and includes a reverse recovery time of 10 ns.

Feature Summary

  • Metallurgically bonded construction for structural integrity
  • Sigma Bond plating ensures reliable solderability
  • DO-35 glass package design

Applications

  • General purpose applications requiring controlled forward characteristics
  • Circuits demanding fast switching speed

Procurement Notes

Verify the specific datasheet version associated with the Microchip Technology manufacturer designation, as historical data often references BKC. Confirm that the TR suffix corresponds to tape and reel packaging compatible with automated assembly processes. Ensure the component meets all required electrical parameters for the intended operating environment before integration.

Selection Notes

Select this component when a small-signal switching diode with high thermal stability is required. The DO-35 through-hole package suits manual or standard automated insertion. Consider the 85 V breakdown voltage and 200 mA current limits to ensure adequate margin for the target circuit design requirements.

Part Context

This part belongs to the family of general-purpose silicon switching diodes designed for signal processing and computer logic applications. The DO-35 glass encapsulation provides environmental protection while maintaining low parasitic capacitance. These components are widely utilized in digital circuits where rapid transition between states is critical for system performance.

Replacement Considerations

Consult official substitution lists for equivalent parts from other manufacturers. Verify pinout compatibility and electrical parameter alignment before replacing the original component in existing designs.

1N4607/TR1N4607/TR
$1.94
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